Datasheets
NVHL080N120SC1A by: onsemi

Overview of: NVHL080N120SC1A by onsemi

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Price & Stock for: NVHL080N120SC1A

Distributor Stock Package QTY Break / Prices
View this part on Digi-Key
0 Tube
  • 1 $19.7200
  • 10 $18.1220
  • 100 $15.3054
  • 500 $13.6152
View this part on Avnet Americas
0 Tube
  • 450 $12.8043
  • 460 $12.4628
  • 910 $12.1214
  • 2,300 $11.7800
  • 4,500 $11.4385
View this part on Avnet Americas
0 Tube
  • 28 $13.2608
  • 30 $12.9024
  • 60 $12.5440
  • 140 $12.1856
  • 280 $11.8272
  • 1,400 $11.4688
  • 2,800 $11.1104
View this part on Newark
191 Bulk
  • 1 $14.0800
  • 10 $12.9400
  • 25 $12.2700
  • 50 $11.6000
  • 100 $11.1400
  • 250 $10.6800
  • 500 $10.4900
View this part on Rochester Electronics
170
  • 1 $12.0700
  • 25 $11.8200
  • 100 $11.5800
  • 500 $11.3400
  • 1,000 $11.1000
View this part on Ameya Holding Limited
620
View this part on Avnet Europe
0
  • 450 $30.8743
  • 900 $28.6370
  • 1,800 $24.1625
  • 2,700 $21.9252
  • 3,600 $19.8669
  • 4,500 $17.4507
  • 45,000 $16.3768
View this part on element14 Asia-Pacific
191 Each
  • 1 $17.5837
  • 10 $16.1590
  • 100 $13.6512
  • 500 $13.5131
View this part on Farnell
191 Each
  • 1 $22.0298
  • 5 $20.7119
  • 10 $19.3940
  • 50 $19.0070
View this part on New Advantage Corporation
900
  • 450 $15.8200
  • 900 $14.6000

Part Details for: NVHL080N120SC1A

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Part Data Attributes

NVHL080N120SC1A onsemi

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NVHL080N120SC1A onsemi Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE

Source Content uid NVHL080N120SC1A
Pbfree Code Yes
Part Life Cycle Code Active
Package Description FLANGE MOUNT, R-PSFM-T3
Manufacturer Package Code 340CX
Reach Compliance Code compliant
Factory Lead Time 67 Weeks
Date Of Intro 2020-04-22
Avalanche Energy Rating (Eas) 171 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (Abs) (ID) 31 A
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6.5 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 178 W
Pulsed Drain Current-Max (IDM) 132 A
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for: NVHL080N120SC1A

Part Number Description Manufacturer Compare
MSC080SMA120S Transistors Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA Microchip Technology Inc NVHL080N120SC1A vs MSC080SMA120S
S2301 Transistors Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor NVHL080N120SC1A vs S2301
MSC080SMA120B Transistors Power Field-Effect Transistor, Microsemi Corporation NVHL080N120SC1A vs MSC080SMA120B
SCT2080KE Transistors Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor NVHL080N120SC1A vs SCT2080KE

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