Datasheets
NVHL080N120SC1A by: onsemi

Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE

Part Details for: NVHL080N120SC1A by onsemi

Overview of: NVHL080N120SC1A by onsemi

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Price & Stock for: NVHL080N120SC1A

Distributor Stock Package QTY Break / Prices
View NVHL080N120SC1A on Digi-Key
0 Tube
  • 1 $19.0000
  • 10 $17.4630
  • 100 $14.7488
  • 500 $13.1201
View NVHL080N120SC1A on Avnet Americas
0 Tube
  • 450 $12.8043
  • 460 $12.4628
  • 910 $12.1214
  • 2,300 $11.7800
  • 4,500 $11.4385
View NVHL080N120SC1A on Avnet Americas
0 Tube
  • 28 $13.2608
  • 30 $12.9024
  • 60 $12.5440
  • 140 $12.1856
  • 280 $11.8272
  • 1,400 $11.4688
  • 2,800 $11.1104
View NVHL080N120SC1A on Newark
191 Bulk
  • 1 $19.7200
  • 10 $18.1100
  • 25 $17.3600
  • 50 $16.3300
  • 100 $15.3000
View NVHL080N120SC1A on Rochester Electronics
170
  • 1 $12.0700
  • 25 $11.8200
  • 100 $11.5800
  • 500 $11.3400
  • 1,000 $11.1000
View NVHL080N120SC1A on Ameya Holding Limited
875
View NVHL080N120SC1A on Avnet Europe
0
  • 30 $32.0336
  • 60 $29.7123
  • 120 $25.0698
  • 180 $22.7485
  • 240 $20.6129
  • 300 $18.1060
  • 3,000 $16.9917
View NVHL080N120SC1A on element14 Asia-Pacific
191 Each
  • 1 $23.5792
  • 10 $21.6677
  • 100 $18.3058
  • 500 $16.2810
View NVHL080N120SC1A on Farnell
191 Each
  • 1 $21.9515
  • 5 $20.6382
  • 10 $19.3250
  • 50 $18.9395
View NVHL080N120SC1A on New Advantage Corporation
900
  • 450 $16.0000
  • 900 $14.7700

Part Details for: NVHL080N120SC1A

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Part Data Attributes

NVHL080N120SC1A onsemi

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NVHL080N120SC1A onsemi Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE

Source Content uid NVHL080N120SC1A
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Manufacturer Package Code 340CX
Reach Compliance Code compliant
Factory Lead Time 67 Weeks
Date Of Intro 2020-04-22
Avalanche Energy Rating (Eas) 171 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (Abs) (ID) 31 A
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6.5 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 178 W
Pulsed Drain Current-Max (IDM) 132 A
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for: NVHL080N120SC1A

This table gives cross-reference parts and alternative options found for NVHL080N120SC1A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVHL080N120SC1A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTHL080N120SC1 Transistors Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE onsemi NVHL080N120SC1A vs NTHL080N120SC1
NVHL080N120SC1 Transistors Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE onsemi NVHL080N120SC1A vs NVHL080N120SC1
Part Number Description Manufacturer Compare
NTHL080N120SC1 Transistors Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE onsemi NVHL080N120SC1A vs NTHL080N120SC1
NVHL080N120SC1 Transistors Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE onsemi NVHL080N120SC1A vs NVHL080N120SC1
MSC080SMA120S Transistors Power Field-Effect Transistor, Microsemi Corporation NVHL080N120SC1A vs MSC080SMA120S
MSC080SMA120B Transistors Power Field-Effect Transistor, Microsemi Corporation NVHL080N120SC1A vs MSC080SMA120B
SCH2080KE Transistors Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor NVHL080N120SC1A vs SCH2080KE
S2301 Transistors Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor NVHL080N120SC1A vs S2301

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