Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
| Distributor | Stock | Package | QTY Break / Prices |
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0 | Tube |
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0 | Tube |
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0 | Tube |
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191 | Bulk |
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170 |
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875 |
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0 |
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191 | Each |
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191 | Each |
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900 |
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NVHL080N120SC1A onsemiBuy Now Datasheet |
Compare Parts:NVHL080N120SC1A onsemi Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE |
| Source Content uid | NVHL080N120SC1A | |
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Manufacturer Package Code | 340CX | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 67 Weeks | |
| Date Of Intro | 2020-04-22 | |
| Avalanche Energy Rating (Eas) | 171 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (Abs) (ID) | 31 A | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6.5 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 178 W | |
| Pulsed Drain Current-Max (IDM) | 132 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
This table gives cross-reference parts and alternative options found for NVHL080N120SC1A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVHL080N120SC1A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NTHL080N120SC1 Transistors | Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE | onsemi | NVHL080N120SC1A vs NTHL080N120SC1 |
| NVHL080N120SC1 Transistors | Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE | onsemi | NVHL080N120SC1A vs NVHL080N120SC1 |