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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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0 | Tube |
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0 | Tube |
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191 | Bulk |
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170 |
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620 |
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0 |
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191 | Each |
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191 | Each |
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900 |
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NVHL080N120SC1A onsemiBuy Now Datasheet |
Compare Parts:NVHL080N120SC1A onsemi Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE |
| Source Content uid | NVHL080N120SC1A | |
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Manufacturer Package Code | 340CX | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 67 Weeks | |
| Date Of Intro | 2020-04-22 | |
| Avalanche Energy Rating (Eas) | 171 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (Abs) (ID) | 31 A | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6.5 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 178 W | |
| Pulsed Drain Current-Max (IDM) | 132 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MSC080SMA120S Transistors | Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA | Microchip Technology Inc | NVHL080N120SC1A vs MSC080SMA120S |
| S2301 Transistors | Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE | ROHM Semiconductor | NVHL080N120SC1A vs S2301 |
| MSC080SMA120B Transistors | Power Field-Effect Transistor, | Microsemi Corporation | NVHL080N120SC1A vs MSC080SMA120B |
| SCT2080KE Transistors | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | ROHM Semiconductor | NVHL080N120SC1A vs SCT2080KE |
