Datasheets
SCT2080KEGC11 by: ROHM Semiconductor

Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN

Part Details for SCT2080KEGC11 by ROHM Semiconductor

Overview of SCT2080KEGC11 by ROHM Semiconductor

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SCT2080KEGC11

Part # Distributor Description Stock Price Buy
DISTI # 85AJ4589
Newark Mosfet, N-Ch, 1.2Kv, 40A, To-247N Rohs Compliant: Yes |Rohm SCT2080KEGC11 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 283
  • 1 $19.2700
  • 5 $18.2800
  • 10 $17.2700
  • 25 $16.2600
  • 50 $15.1600
  • 100 $14.8400
  • 250 $14.3500
$14.3500 / $19.2700 Buy Now
DISTI # 846-SCT2080KEGC11-ND
DigiKey MOSFET N-CH 1200V 40A TO247N Min Qty: 1 Lead time: 24 Weeks Container: Tube 992
In Stock
  • 1 $25.0200
  • 10 $22.2340
  • 450 $16.5944
$16.5944 / $25.0200 Buy Now
DISTI # SCT2080KEGC11
Avnet Americas Transistor MOSFET N-CH 1200V 40A 3-Pin TO-247N Tube - Rail/Tube (Alt: SCT2080KEGC11) RoHS: Not Compliant Min Qty: 450 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Tube 450
RFQ
DISTI # 755-SCT2080KEGC11
Mouser Electronics MOSFET SILICON CARBIDE RoHS: Compliant 252
  • 1 $25.0200
  • 10 $22.2400
  • 50 $19.4500
$19.4500 / $25.0200 Buy Now
Future Electronics SCT2080 Series N-Channel 1200 V 40A 262W Through Hole MOSFET TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $16.2700
$16.2700 Buy Now
Quest Components   900
  • 1 $23.4180
  • 268 $18.1490
  • 552 $17.5635
$17.5635 / $23.4180 Buy Now
DISTI # SCT2080KEGC11
TTI MOSFET SILICON CARBIDE RoHS: Compliant pbFree: Pb-Free Min Qty: 30 Package Multiple: 30 Container: Tube Americas - 60
In Stock
  • 30 $22.0200
  • 450 $16.5900
$16.5900 / $22.0200 Buy Now
DISTI # SCT2080KEGC11
Avnet Americas Transistor MOSFET N-CH 1200V 40A 3-Pin TO-247N Tube - Rail/Tube (Alt: SCT2080KEGC11) RoHS: Not Compliant Min Qty: 450 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Tube 450
RFQ
DISTI # SCT2080KEGC11
TME Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 40A, Idm: 80A, 262W Min Qty: 1 0
  • 1 $26.4400
  • 3 $23.8700
  • 10 $21.0900
  • 30 $19.0500
$19.0500 / $26.4400 RFQ
DISTI # SCT2080KEGC11
Avnet Americas Transistor MOSFET N-CH 1200V 40A 3-Pin TO-247N Tube - Rail/Tube (Alt: SCT2080KEGC11) RoHS: Not Compliant Min Qty: 450 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Tube 450
RFQ
DISTI # 3869176
element14 Asia-Pacific MOSFET, N-CH, 1.2KV, 40A, TO-247N RoHS: Compliant Min Qty: 1 Container: Each 283
  • 1 $24.9503
  • 5 $23.5633
  • 10 $22.1691
  • 50 $19.3878
  • 100 $19.0062
  • 250 $18.6173
$18.6173 / $24.9503 Buy Now
DISTI # 3869176
Farnell MOSFET, N-CH, 1.2KV, 40A, TO-247N RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 283
  • 1 $25.0740
  • 5 $23.6831
  • 10 $22.2797
  • 50 $19.4978
  • 100 $19.1094
  • 250 $18.7209
$18.7209 / $25.0740 Buy Now

Part Details for SCT2080KEGC11

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SCT2080KEGC11 Part Data Attributes

SCT2080KEGC11 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
SCT2080KEGC11 ROHM Semiconductor Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description TO-247N, 3 PIN
Reach Compliance Code compliant
Factory Lead Time 24 Weeks
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.117 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 16 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 262 W
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for SCT2080KEGC11

This table gives cross-reference parts and alternative options found for SCT2080KEGC11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCT2080KEGC11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SCT2080KE Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor SCT2080KEGC11 vs SCT2080KE
SCT3080KLHRC11 Power Field-Effect Transistor, ROHM Semiconductor SCT2080KEGC11 vs SCT3080KLHRC11
Part Number Description Manufacturer Compare
SCT3080KLHRC11 Power Field-Effect Transistor, ROHM Semiconductor SCT2080KEGC11 vs SCT3080KLHRC11
S2301 Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor SCT2080KEGC11 vs S2301
SCT2080KE Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor SCT2080KEGC11 vs SCT2080KE

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