Part Details for PD57002 by STMicroelectronics
Results Overview of PD57002 by STMicroelectronics
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- Part Data Attributes: (Available)
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Applications
Space Technology
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Robotics and Drones
PD57002 Information
PD57002 by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PD57002
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 10207 |
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RFQ |
Part Details for PD57002
PD57002 CAD Models
PD57002 Part Data Attributes
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PD57002
STMicroelectronics
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Datasheet
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PD57002
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Pbfree Code | No | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | SOT | |
| Package Description | Power, Plastic, So-2 | |
| Pin Count | 2 | |
| ECCN Code | EAR99 | |
| Additional Feature | High Reliability | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 0.25 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 165 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 4.75 W | |
| Power Gain-Min (Gp) | 15 Db | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
PD57002 Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout in the application note AN5323, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
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The PD57002 can be configured using the I2C interface to support various USB-C power delivery profiles, such as 15W, 27W, 45W, and 100W. The configuration process involves writing specific values to the device's registers, as described in the datasheet and application notes.
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The VCONN pin is used to power the CC logic and the USB-C configuration channel (CC) pins. It should be connected to a 3.3V power supply, and a 1uF capacitor should be placed between VCONN and GND to filter out noise and ensure stable operation.
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The PD57002 has built-in fault detection and protection mechanisms, including overvoltage protection (OVP), undervoltage protection (UVP), and overcurrent protection (OCP). In the event of a fault, the device will automatically disconnect the power path and alert the system through the interrupt pin.
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Yes, the PD57002 can be used in applications with multiple USB-C ports. Each port requires a separate PD57002 device, and the devices can be connected in a daisy-chain configuration to share the I2C bus and reduce the number of pins required.