Part Details for PD57018 by STMicroelectronics
Results Overview of PD57018 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (5 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
PD57018 Information
PD57018 by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PD57018
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
PD57018-ND
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DigiKey | RF MOSFET LDMOS 28V POWERSO10 Min Qty: 50 Container: Tube |
0 Tube |
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$19.1494 | Buy Now |
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Vyrian | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 5451 |
|
RFQ |
Part Details for PD57018
PD57018 CAD Models
PD57018 Part Data Attributes
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PD57018
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
PD57018
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Pbfree Code | No | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOT | |
| Package Description | Power, Plastic, So-2 | |
| Pin Count | 2 | |
| ECCN Code | EAR99 | |
| Additional Feature | High Reliability | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 2.5 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 1.3 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 165 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 31.7 W | |
| Power Gain-Min (Gp) | 14 Db | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
Alternate Parts for PD57018
This table gives cross-reference parts and alternative options found for PD57018. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD57018, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PD57018-E | STMicroelectronics | $14.5850 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57018 vs PD57018-E |
| PD57018STR-E | STMicroelectronics | $24.1764 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57018 vs PD57018STR-E |
| PD57018S | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57018 vs PD57018S |
| 934056838112 | NXP Semiconductors | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57018 vs 934056838112 |
| BLF0810-180 | NXP Semiconductors | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57018 vs BLF0810-180 |
PD57018 Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout in the application note AN5323, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
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The input capacitor values depend on the input voltage, output voltage, and desired output ripple. A general guideline is to use a minimum of 10uF ceramic capacitors with a voltage rating of at least 1.5 times the input voltage. However, it's recommended to consult the application note AN5323 for more detailed guidance on capacitor selection.
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While the datasheet specifies an operating temperature range of -40°C to 150°C, the maximum ambient temperature for reliable operation is typically around 125°C. Exceeding this temperature may affect the device's reliability and lifespan.
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To ensure proper power-up and power-down sequencing, it's essential to follow the recommended startup and shutdown procedures outlined in the datasheet. This includes controlling the enable pin, input voltage, and output voltage to prevent damage or malfunction.
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Thermal management is critical for the PD57018. Key considerations include providing adequate heat sinking, using thermal vias, and ensuring good airflow around the device. The application note AN5323 provides more detailed guidance on thermal management and design considerations.