Part Details for PHP2N60E by NXP Semiconductors
Results Overview of PHP2N60E by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PHP2N60E Information
PHP2N60E by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
US Tariff Estimator: PHP2N60E by NXP Semiconductors
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for PHP2N60E
PHP2N60E Part Data Attributes
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PHP2N60E
NXP Semiconductors
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Datasheet
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PHP2N60E
NXP Semiconductors
TRANSISTOR 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN, FET General Purpose Power
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | To-220ab, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Fast Switching | |
| Avalanche Energy Rating (Eas) | 102 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 1.9 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 55 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 7.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 105 Ns | |
| Turn-on Time-Max (ton) | 80 Ns |
Alternate Parts for PHP2N60E
This table gives cross-reference parts and alternative options found for PHP2N60E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHP2N60E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| BUK9506-55A,127 | Nexperia | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | PHP2N60E vs BUK9506-55A,127 |
| BUK9514-55 | NXP Semiconductors | Check for Price | TRANSISTOR 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | PHP2N60E vs BUK9514-55 |
| PSMN4R6-60PS | Nexperia | Check for Price | Power Field-Effect Transistor, 100A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | PHP2N60E vs PSMN4R6-60PS |
| BUK9506-55A,127 | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | PHP2N60E vs BUK9506-55A,127 |
| IRF9642 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | PHP2N60E vs IRF9642 |
| PHW9N60E | NXP Semiconductors | Check for Price | TRANSISTOR 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, PLASTIC, TO-247, 3 PIN, FET General Purpose Power | PHP2N60E vs PHW9N60E |
| IRL1404ZL | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | PHP2N60E vs IRL1404ZL |
| BUK9504-40A,127 | NXP Semiconductors | Check for Price | N-channel TrenchMOS logic level FET TO-220 3-Pin | PHP2N60E vs BUK9504-40A,127 |
| BUK754R3-40B | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | PHP2N60E vs BUK754R3-40B |
| PHP69N03LT | NXP Semiconductors | Check for Price | TRANSISTOR 69 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | PHP2N60E vs PHP69N03LT |