There are no models available for this part yet.
Overview of PHT6N06T by NXP Semiconductors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 2 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for PHT6N06T by NXP Semiconductors
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 3372 |
|
RFQ | ||||
Quest Components | 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET | 2697 |
|
$0.4060 / $1.1600 | Buy Now | ||
ComSIT USA | TRENCHMOS STANDARD LEVEL FET Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
|
|
RFQ |
CAD Models for PHT6N06T by NXP Semiconductors
Part Data Attributes for PHT6N06T by NXP Semiconductors
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
NXP SEMICONDUCTORS
|
Part Package Code
|
SC-73
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Package Description
|
PLASTIC, SC-73, 4 PIN
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Pin Count
|
4
|
Reach Compliance Code
|
unknown
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ECCN Code
|
EAR99
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HTS Code
|
8541.29.00.75
|
Additional Feature
|
ESD PROTECTED
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Avalanche Energy Rating (Eas)
|
15 mJ
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Case Connection
|
DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
55 V
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Drain Current-Max (ID)
|
5.5 A
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Drain-source On Resistance-Max
|
0.15 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
|
R-PDSO-G4
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
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Number of Terminals
|
4
|
Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
150 °C
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Package Body Material
|
PLASTIC/EPOXY
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Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
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Power Dissipation-Max (Abs)
|
1.8 W
|
Pulsed Drain Current-Max (IDM)
|
22 A
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Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
Tin (Sn)
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
|
Alternate Parts for PHT6N06T
This table gives cross-reference parts and alternative options found for PHT6N06T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHT6N06T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
PHT6N06TT/R | Power Field-Effect Transistor | Nexperia | PHT6N06T vs PHT6N06TT/R |
PHT6N06T,135 | PHT6N06T - N-channel TrenchMOS standard level FET SC-73 4-Pin | NXP Semiconductors | PHT6N06T vs PHT6N06T,135 |
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