Datasheets
PSMN070-200B by:

TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power

Part Details for PSMN070-200B by NXP Semiconductors

Overview of PSMN070-200B by NXP Semiconductors

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Available Datasheets

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Price & Stock for PSMN070-200B

Part # Distributor Description Stock Price Buy
Bristol Electronics   700
RFQ

Part Details for PSMN070-200B

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PSMN070-200B Part Data Attributes

PSMN070-200B NXP Semiconductors
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PSMN070-200B NXP Semiconductors TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 462 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230 W
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PSMN070-200B

This table gives cross-reference parts and alternative options found for PSMN070-200B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN070-200B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PSMN070-200B/T3 Power Field-Effect Transistor Nexperia PSMN070-200B vs PSMN070-200B/T3
934055719118 TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors PSMN070-200B vs 934055719118
PSMN070-200B,118 N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin NXP Semiconductors PSMN070-200B vs PSMN070-200B,118
Part Number Description Manufacturer Compare
IRFS23N20DTRRP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier PSMN070-200B vs IRFS23N20DTRRP
934055719118 TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors PSMN070-200B vs 934055719118
PSMN070-200B,118 N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin NXP Semiconductors PSMN070-200B vs PSMN070-200B,118
FQB34N20LTM Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3 Fairchild Semiconductor Corporation PSMN070-200B vs FQB34N20LTM
IRFS23N20DTRLP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier PSMN070-200B vs IRFS23N20DTRLP
FQB34N20TM 31A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3 Rochester Electronics LLC PSMN070-200B vs FQB34N20TM
IRFS31N20DTRR Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier PSMN070-200B vs IRFS31N20DTRR
IRFS23N20DPBF Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier PSMN070-200B vs IRFS23N20DPBF
FQB34N20TM_AM002 Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3 Fairchild Semiconductor Corporation PSMN070-200B vs FQB34N20TM_AM002
IRFS31N20DPBF Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier PSMN070-200B vs IRFS31N20DPBF

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