Part Details for PSMN070-200B by NXP Semiconductors
Overview of PSMN070-200B by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
AD9520-0BCPZ | Analog Devices | Clock IC with 2.8GHz on-chip V | |
ADUM2200BRWZ-RL | Analog Devices | DUAL-CHANNEL DIGITAL ISOLATORS | |
ADUM3200BRZ-RL7 | Analog Devices | pb Free DUAL-CHANNEL DIGITAL I |
Price & Stock for PSMN070-200B
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 700 |
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RFQ |
Part Details for PSMN070-200B
PSMN070-200B CAD Models
PSMN070-200B Part Data Attributes
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PSMN070-200B
NXP Semiconductors
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Datasheet
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Compare Parts:
PSMN070-200B
NXP Semiconductors
TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | PLASTIC, D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 462 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 230 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PSMN070-200B
This table gives cross-reference parts and alternative options found for PSMN070-200B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN070-200B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PSMN070-200B/T3 | Power Field-Effect Transistor | Nexperia | PSMN070-200B vs PSMN070-200B/T3 |
934055719118 | TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PSMN070-200B vs 934055719118 |
PSMN070-200B,118 | N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin | NXP Semiconductors | PSMN070-200B vs PSMN070-200B,118 |