Part Details for PSMN5R6-100BS by Nexperia
Results Overview of PSMN5R6-100BS by Nexperia
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN5R6-100BS Information
PSMN5R6-100BS by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN5R6-100BS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Chip Stock | 100A100V0.0056OhmN-channelSiPowerMosfet | 144000 |
|
RFQ | |
|
|
Vyrian | Other Function Semiconductors | 7427 |
|
RFQ |
Part Details for PSMN5R6-100BS
PSMN5R6-100BS CAD Models
PSMN5R6-100BS Part Data Attributes
|
|
PSMN5R6-100BS
Nexperia
Buy Now
Datasheet
|
Compare Parts:
PSMN5R6-100BS
Nexperia
Power Field-Effect Transistor
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | D2pak-3/2 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-02-01 | |
| Avalanche Energy Rating (Eas) | 468 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0056 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 539 A | |
| Reference Standard | Iec-60134 | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |