Part Details for PTF080451E by Infineon Technologies AG
Overview of PTF080451E by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for PTF080451E
PTF080451E CAD Models
PTF080451E Part Data Attributes
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PTF080451E
Infineon Technologies AG
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Datasheet
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PTF080451E
Infineon Technologies AG
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-2
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, S-CDFM-F2 | |
Pin Count | 2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | S-CDFM-F2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 200 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 184 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for PTF080451E
This table gives cross-reference parts and alternative options found for PTF080451E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PTF080451E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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LF2805A | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | TE Connectivity | PTF080451E vs LF2805A |
PTF040551E | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 30265, 2 PIN | Infineon Technologies AG | PTF080451E vs PTF040551E |
LF2805A | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | MACOM | PTF080451E vs LF2805A |
D2017UK | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DP, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | PTF080451E vs D2017UK |
PTF040551F | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31265, 2 PIN | Infineon Technologies AG | PTF080451E vs PTF040551F |