Datasheets
PTF080451E by: Infineon Technologies AG

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-2

Part Details for PTF080451E by Infineon Technologies AG

Overview of PTF080451E by Infineon Technologies AG

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Part Details for PTF080451E

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PTF080451E Part Data Attributes

PTF080451E Infineon Technologies AG
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PTF080451E Infineon Technologies AG RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-2
Part Life Cycle Code Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, S-CDFM-F2
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code S-CDFM-F2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 184 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for PTF080451E

This table gives cross-reference parts and alternative options found for PTF080451E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PTF080451E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
LF2805A UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity PTF080451E vs LF2805A
PTF040551E RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 30265, 2 PIN Infineon Technologies AG PTF080451E vs PTF040551E
LF2805A RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MACOM PTF080451E vs LF2805A
D2017UK UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DP, 3 PIN TT Electronics Power and Hybrid / Semelab Limited PTF080451E vs D2017UK
PTF040551F RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31265, 2 PIN Infineon Technologies AG PTF080451E vs PTF040551F

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