PTF10045
Description: RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 20222, 3 PIN

Overview of PTF10045 by Infineon Technologies AG

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
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  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Space Technology Medical Imaging Telecommunications

CAD Models for PTF10045 by Infineon Technologies AG
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Part Data Attributes for PTF10045 by Infineon Technologies AG

PTF10045
Infineon Technologies AG
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-CDFM-F2
Pin Count
3
Manufacturer Package Code
CASE 20222
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
65 V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
L BAND
JESD-30 Code
R-CDFM-F2
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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  1. PTF10045
    Infineon Technologies AG
    RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 20222, 3 PIN
    VS

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