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Transistors Power Field-Effect Transistors R5011ANX

Transistors
R5011ANX
ROHM Semiconductor
Description: Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN

Overview of R5011ANX by ROHM Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for R5011ANX by ROHM Semiconductor

Part # Manufacturer Description Stock Price Buy
Quest Components   80
  • 1 $3.4280
  • 36 $1.8854
  • 81 $1.7140
$1.7140 / $3.4280 Buy Now
DISTI # C1S625900681157
Chip1Stop Trans MOSFET N-CH Si 500V 11A 3-Pin(3+Tab) TO-220FM Bulk RoHS: Compliant pbFree: Yes 100
  • 10 $3.1000
  • 30 $2.9500
  • 50 $2.8200
$2.8200 / $3.1000 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2014 Date Code: 2014 100
  • 1 $0.9210
  • 10 $0.8960
  • 50 $0.8790
  • 100 $0.8630
  • 500 $0.8590
  • 1,000 $0.8570
$0.8570 / $0.9210 Buy Now

CAD Models for R5011ANX by ROHM Semiconductor
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Part Data Attributes for R5011ANX by ROHM Semiconductor
Parametric Data

R5011ANX
ROHM Semiconductor
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ROHM CO LTD
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
ROHM Semiconductor
Avalanche Energy Rating (Eas)
8.1 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
11 A
Drain-source On Resistance-Max
0.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
50 W
Pulsed Drain Current-Max (IDM)
44 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. R5011ANX
    ROHM Semiconductor
    Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
    VS

Alternate Parts for R5011ANX

This table gives cross-reference parts and alternative options found for R5011ANX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R5011ANX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FMV12N50ES Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F(SLS), 3 PIN Fuji Electric Co Ltd R5011ANX vs FMV12N50ES
IRHM8450PBF Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 Infineon Technologies AG R5011ANX vs IRHM8450PBF
SSF13N50F Power Field-Effect Transistor, 13A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN Suzhou Good-Ark Electronics Co Ltd R5011ANX vs SSF13N50F
ZDX130N50 Power Field-Effect Transistor, 13A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN ROHM Semiconductor R5011ANX vs ZDX130N50
FQPF13N50C_G Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, SC-91A, TO-220F, FULL PACK-3 Fairchild Semiconductor Corporation R5011ANX vs FQPF13N50C_G
FQPF13N50CT Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, SC-91A, TO-220F, FULL PACK-3 Fairchild Semiconductor Corporation R5011ANX vs FQPF13N50CT
11N50G-TF1-T Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F1, 3 PIN Unisonic Technologies Co Ltd R5011ANX vs 11N50G-TF1-T
12N50G-TF1-T Power Field-Effect Transistor, 12A I(D), 500V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F1, 3 PIN Unisonic Technologies Co Ltd R5011ANX vs 12N50G-TF1-T
11N50G-TF3-T Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Unisonic Technologies Co Ltd R5011ANX vs 11N50G-TF3-T
FMI12N50E Power Field-Effect Transistor, 12A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TPACK-3 Fuji Electric Co Ltd R5011ANX vs FMI12N50E

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