There are no models available for this part yet.
Overview of RD02MUS1B-101 by Mitsubishi Electric
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 2 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 3 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for RD02MUS1B-101 by Mitsubishi Electric
Part Data Attributes for RD02MUS1B-101 by Mitsubishi Electric
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|---|---|
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Pbfree Code
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Yes
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Rohs Code
|
Yes
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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MITSUBISHI ELECTRIC CORP
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Package Description
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CHIP CARRIER, R-XQCC-N3
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Pin Count
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3
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Case Connection
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SOURCE
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
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30 V
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Drain Current-Max (ID)
|
1.5 A
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Highest Frequency Band
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ULTRA HIGH FREQUENCY BAND
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JESD-30 Code
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R-XQCC-N3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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UNSPECIFIED
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Package Shape
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RECTANGULAR
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Package Style
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CHIP CARRIER
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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21.9 W
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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NO LEAD
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Terminal Position
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QUAD
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
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AMPLIFIER
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Transistor Element Material
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SILICON
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Alternate Parts for RD02MUS1B-101
This table gives cross-reference parts and alternative options found for RD02MUS1B-101. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RD02MUS1B-101, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RD02MUS1-101,T112 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10 | Mitsubishi Electric | RD02MUS1B-101 vs RD02MUS1-101,T112 |
| RD02MUS1 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10 | Mitsubishi Electric | RD02MUS1B-101 vs RD02MUS1 |