Part Details for RF1S50N06SM by Fairchild Semiconductor Corporation
Overview of RF1S50N06SM by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for RF1S50N06SM
RF1S50N06SM CAD Models
RF1S50N06SM Part Data Attributes
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RF1S50N06SM
Fairchild Semiconductor Corporation
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Datasheet
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RF1S50N06SM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 131 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for RF1S50N06SM
This table gives cross-reference parts and alternative options found for RF1S50N06SM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1S50N06SM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STB55NE06 | 55A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | STMicroelectronics | RF1S50N06SM vs STB55NE06 |
RF1S50N06SM9A | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Harris Semiconductor | RF1S50N06SM vs RF1S50N06SM9A |
STB55NE06T4 | 55A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | STMicroelectronics | RF1S50N06SM vs STB55NE06T4 |
HUF75329S3ST | Power Field-Effect Transistor, 49A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Fairchild Semiconductor Corporation | RF1S50N06SM vs HUF75329S3ST |
HUF75329S3ST | 49A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Rochester Electronics LLC | RF1S50N06SM vs HUF75329S3ST |
HUF75329S3S | 42A, 55V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | RF1S50N06SM vs HUF75329S3S |
RF1S50N06SM9A | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Fairchild Semiconductor Corporation | RF1S50N06SM vs RF1S50N06SM9A |
HUF75329S3S | Power Field-Effect Transistor, 42A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Harris Semiconductor | RF1S50N06SM vs HUF75329S3S |