| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RF1S50N06SM9A | Rochester Electronics LLC | Check for Price | 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STB55NE06 vs RF1S50N06SM9A |
| RF1S50N06SM | Intersil Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STB55NE06 vs RF1S50N06SM |
| HUF75329S3ST | Rochester Electronics LLC | Check for Price | 49A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STB55NE06 vs HUF75329S3ST |
| RF1S50N06SM9A | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STB55NE06 vs RF1S50N06SM9A |
| HUF75329S3ST | Intersil Corporation | Check for Price | Power Field-Effect Transistor, 49A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STB55NE06 vs HUF75329S3ST |
| HUF75329S3S | Intersil Corporation | Check for Price | Power Field-Effect Transistor, 49A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STB55NE06 vs HUF75329S3S |
| HUF75329S3S | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 42A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STB55NE06 vs HUF75329S3S |
| HUF75329S3ST | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 49A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STB55NE06 vs HUF75329S3ST |
Part Details for STB55NE06 by STMicroelectronics
Results Overview of STB55NE06 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (8 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
STB55NE06 Information
STB55NE06 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
STB55NE06 Part Data Attributes
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STB55NE06
STMicroelectronics
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Datasheet
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STB55NE06
STMicroelectronics
Power Field-Effect Transistor, 55A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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| Part Life Cycle Code | Obsolete | |
| Part Package Code | D2PAK | |
| Package Description | D2pak-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 200 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STB55NE06
This table gives cross-reference parts and alternative options found for STB55NE06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB55NE06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.