Part Details for RFD14N05SM by Harris Semiconductor
Overview of RFD14N05SM by Harris Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFD14N05SM
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 11 | 630 |
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$0.1560 / $0.4875 | Buy Now |
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Quest Components | 14A, 50V, 0.1OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA | 504 |
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$0.1950 / $0.6500 | Buy Now |
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Quest Components | 14A, 50V, 0.1OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA | 82 |
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$0.6250 / $1.2500 | Buy Now |
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Quest Components | 14A, 50V, 0.1OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA | 79 |
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$0.5000 / $0.7500 | Buy Now |
Part Details for RFD14N05SM
RFD14N05SM CAD Models
RFD14N05SM Part Data Attributes
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RFD14N05SM
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFD14N05SM
Harris Semiconductor
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 48 W | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 35 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 100 ns | |
Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for RFD14N05SM
This table gives cross-reference parts and alternative options found for RFD14N05SM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05SM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
RFD14N05SM9A | N-Channel Power MOSFET 50V, 14A, 100mΩ, 2500-REEL | onsemi | RFD14N05SM vs RFD14N05SM9A |
RFD14N05SM9A | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | RFD14N05SM vs RFD14N05SM9A |
MTD3055E | Power Field-Effect Transistor, 8A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | Motorola Semiconductor Products | RFD14N05SM vs MTD3055E |
MTD10N05E | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,10A I(D),TO-252AA | Freescale Semiconductor | RFD14N05SM vs MTD10N05E |
RFD14N05SM9A_NL | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN | Rochester Electronics LLC | RFD14N05SM vs RFD14N05SM9A_NL |
RFD14N05SM | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | RFD14N05SM vs RFD14N05SM |
RFD14N05SM9A | Power Field-Effect Transistor, | Rochester Electronics LLC | RFD14N05SM vs RFD14N05SM9A |
SSR3055 | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | RFD14N05SM vs SSR3055 |
MTD8N06E | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,8A I(D),TO-252AA | Freescale Semiconductor | RFD14N05SM vs MTD8N06E |
2SK2018-01S | Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(S), 3 PIN | Fuji Electric Co Ltd | RFD14N05SM vs 2SK2018-01S |