Datasheets
RFD16N05LSM9A by:

16A, 50V, 0.056ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN

Part Details for RFD16N05LSM9A by Rochester Electronics LLC

Overview of RFD16N05LSM9A by Rochester Electronics LLC

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Part Details for RFD16N05LSM9A

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RFD16N05LSM9A Part Data Attributes

RFD16N05LSM9A Rochester Electronics LLC
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RFD16N05LSM9A Rochester Electronics LLC 16A, 50V, 0.056ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-252AA
Package Description TO-252AA VARIANT, 3 PIN
Pin Count 4
Reach Compliance Code unknown
Additional Feature MEGAFET
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 45 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFD16N05LSM9A

This table gives cross-reference parts and alternative options found for RFD16N05LSM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD16N05LSM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD16N05LSM 16A, 50V, 0.056ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation RFD16N05LSM9A vs RFD16N05LSM
RFD16N05LSM N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB, 1800/RAIL Fairchild Semiconductor Corporation RFD16N05LSM9A vs RFD16N05LSM
SMD25N05-45L Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Vishay Siliconix RFD16N05LSM9A vs SMD25N05-45L
RFD16N05LSM Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD16N05LSM9A vs RFD16N05LSM
RFD16N05L Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, 3 PIN Fairchild Semiconductor Corporation RFD16N05LSM9A vs RFD16N05L
RFD16N05L 16A, 50V, 0.056ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation RFD16N05LSM9A vs RFD16N05L
RFD16N05LSM9A Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN Fairchild Semiconductor Corporation RFD16N05LSM9A vs RFD16N05LSM9A
Part Number Description Manufacturer Compare
SUB75N03-07 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix RFD16N05LSM9A vs SUB75N03-07
RFD3055LESM9A 11A, 60V, 0.107ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252 VARIANT, 3 PIN Rochester Electronics LLC RFD16N05LSM9A vs RFD3055LESM9A
IRFS4610TRL Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier RFD16N05LSM9A vs IRFS4610TRL
RF1S70N06SM9A 70A, 80V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN Intersil Corporation RFD16N05LSM9A vs RF1S70N06SM9A
RFD16N05SM_NL 16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC RFD16N05LSM9A vs RFD16N05SM_NL
IRL2505STRR Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier RFD16N05LSM9A vs IRL2505STRR
IRL3705ZS Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier RFD16N05LSM9A vs IRL3705ZS
IRFZ46NS Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier RFD16N05LSM9A vs IRFZ46NS
RFD3055LESM Power Field-Effect Transistor, Rochester Electronics LLC RFD16N05LSM9A vs RFD3055LESM
RFD16N05SM 16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC RFD16N05LSM9A vs RFD16N05SM

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