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Transistors Power Field-Effect Transistors RFD3055LESM

RFD3055LESM
Description: Power Field-Effect Transistor,

Overview of RFD3055LESM by Rochester Electronics LLC

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Part Data Attributes for RFD3055LESM by Rochester Electronics LLC
Parametric Data

RFD3055LESM
Rochester Electronics LLC
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Contact Manufacturer
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
ECCN Code
EAR99
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  1. RFD3055LESM
    Rochester Electronics LLC
    Power Field-Effect Transistor,
    VS

Alternate Parts for RFD3055LESM

This table gives cross-reference parts and alternative options found for RFD3055LESM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD3055LESM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RFD3055LESM9A N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ, 2500-REEL onsemi RFD3055LESM vs RFD3055LESM9A
RFD3055LESM Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation RFD3055LESM vs RFD3055LESM
RFD3055LESM9A Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD3055LESM vs RFD3055LESM9A
RFD3055LESM9A 11A, 60V, 0.107ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252 VARIANT, 3 PIN Rochester Electronics LLC RFD3055LESM vs RFD3055LESM9A
RFD3055LESM 11A, 60V, 0.107ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation RFD3055LESM vs RFD3055LESM
RFD3055LESM Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD3055LESM vs RFD3055LESM
RFD3055LESM9A_NL Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252 VARIANT, 3 PIN Fairchild Semiconductor Corporation RFD3055LESM vs RFD3055LESM9A_NL
Part Number Description Manufacturer Compare
IRF3007S Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier RFD3055LESM vs IRF3007S
IRFS4710TRLHR Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3/2 International Rectifier RFD3055LESM vs IRFS4710TRLHR
IRFS4610 Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 International Rectifier RFD3055LESM vs IRFS4610
IRL3705ZS Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier RFD3055LESM vs IRL3705ZS
RFD3055LESM9A 11A, 60V, 0.107ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252 VARIANT, 3 PIN Rochester Electronics LLC RFD3055LESM vs RFD3055LESM9A
IRFZ46NS Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier RFD3055LESM vs IRFZ46NS
RFD16N05SM 16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC RFD3055LESM vs RFD16N05SM
RFD16N05SM9A_NL 16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN Rochester Electronics LLC RFD3055LESM vs RFD16N05SM9A_NL
RF1S70N06SM9A 70A, 80V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN Intersil Corporation RFD3055LESM vs RF1S70N06SM9A

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