RFP12N10L
Description: 12A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Overview of RFP12N10L by Intersil Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Space Technology Aerospace and Defense Automotive

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Part Data Attributes for RFP12N10L by Intersil Corporation

RFP12N10L
Intersil Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTERSIL CORP
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
12 A
Drain-source On Resistance-Max
0.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
75 W
Pulsed Drain Current-Max (IDM)
30 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. RFP12N10L
    Intersil Corporation
    12A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
    VS

Alternate Parts for RFP12N10L

This table gives cross-reference parts and alternative options found for RFP12N10L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP12N10L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RFP12N10L N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ, 800-TUBE onsemi RFP12N10L vs RFP12N10L
RFP12N10L 12A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Rochester Electronics LLC RFP12N10L vs RFP12N10L
RFP12N10L N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL Fairchild Semiconductor Corporation RFP12N10L vs RFP12N10L
Part Number Description Manufacturer Compare
RFP15N08L Power Field-Effect Transistor, 15A I(D), 80V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP12N10L vs RFP15N08L
RFP8P05 Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation RFP12N10L vs RFP8P05
RFP45N06LE Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP12N10L vs RFP45N06LE
SPP70N10L Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG RFP12N10L vs SPP70N10L
RFP4N06L Power Field-Effect Transistor, 4A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP12N10L vs RFP4N06L
RFG70N06 Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation RFP12N10L vs RFG70N06
RFG50N06 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation RFP12N10L vs RFG50N06
RFG75N05E 75A, 50V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation RFP12N10L vs RFG75N05E
RFP8P05 Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP12N10L vs RFP8P05
RFG50N05L Power Field-Effect Transistor, 50A I(D), 50V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor RFP12N10L vs RFG50N05L

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