Datasheets
RFP6P08 by:

6A, 80V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for RFP6P08 by Intersil Corporation

Overview of RFP6P08 by Intersil Corporation

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Applications Consumer Electronics Audio and Video Systems

Part Details for RFP6P08

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RFP6P08 Part Data Attributes

RFP6P08 Intersil Corporation
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RFP6P08 Intersil Corporation 6A, 80V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 150 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 60 W
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 250 ns
Turn-on Time-Max (ton) 160 ns

Alternate Parts for RFP6P08

This table gives cross-reference parts and alternative options found for RFP6P08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP6P08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF9520 Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP6P08 vs IRF9520
IRF9520 6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP6P08 vs IRF9520
IRF9520 6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP6P08 vs IRF9520
RFP6P08 6A, 80V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP6P08 vs RFP6P08
IRF9521 Power Field-Effect Transistor, 6A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP6P08 vs IRF9521
IRF9521-001 Power Field-Effect Transistor, 6.8A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier RFP6P08 vs IRF9521-001
IRF9520 Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor RFP6P08 vs IRF9520
IRF9521 Power Field-Effect Transistor, 6A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix RFP6P08 vs IRF9521
IRF9521 Power Field-Effect Transistor, 6A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor RFP6P08 vs IRF9521
Part Number Description Manufacturer Compare
IRF9520 6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP6P08 vs IRF9520
IRF9520 Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP6P08 vs IRF9520
IRF9521-001 Power Field-Effect Transistor, 6.8A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier RFP6P08 vs IRF9521-001
IRF9521 Power Field-Effect Transistor, 6A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor RFP6P08 vs IRF9521
IRF9520 6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP6P08 vs IRF9520
IRF9521 Power Field-Effect Transistor, 6A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix RFP6P08 vs IRF9521
IRF9520 Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor RFP6P08 vs IRF9520
IRF9521-010 Power Field-Effect Transistor, 6.8A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier RFP6P08 vs IRF9521-010
IRF9521 Power Field-Effect Transistor, 6A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP6P08 vs IRF9521
RFP6P08 6A, 80V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP6P08 vs RFP6P08

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