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Part Details for RQ6E050AJTCR by ROHM Semiconductor
Overview of RQ6E050AJTCR by ROHM Semiconductor
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RQ6E050AJTCR
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
10AC8928
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Newark | Mosfet, N-Ch, 30V, 5A, Tsmt-6, Transistor Polarity:N Channel, Continuous Drain Current Id:5A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.026Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.5V, Power Dissipation Rohs Compliant: Yes |Rohm RQ6E050AJTCR Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3475 |
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$0.2620 / $0.6030 | Buy Now |
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DISTI #
RQ6E050AJTCRCT-ND
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DigiKey | MOSFET N-CH 30V 5A TSMT6 Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1957 In Stock |
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$0.1950 / $0.5900 | Buy Now |
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DISTI #
RQ6E050AJTCR
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Avnet Americas | Power MOSFET, N Channel, 30 V, 5 A, 0.026 ohm, TSMT, Surface Mount - Tape and Reel (Alt: RQ6E050AJTCR) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.1997 / $0.2278 | Buy Now |
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DISTI #
755-RQ6E050AJTCR
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Mouser Electronics | MOSFET RQ6E050AJ is small surface mount package MOSFET which is suitable for switching application. RoHS: Compliant | 2975 |
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$0.1950 / $0.5500 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.2060 | Buy Now |
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DISTI #
66288556
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Verical | Trans MOSFET N-CH 30V 5A 6-Pin TSMT T/R RoHS: Compliant Min Qty: 163 Package Multiple: 1 Date Code: 2301 | Americas - 2014 |
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$0.4502 / $0.5029 | Buy Now |
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Quest Components | 1611 |
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$0.3780 / $0.9450 | Buy Now | |
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DISTI #
RQ6E050AJTCR
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Avnet Asia | Power MOSFET, N Channel, 30 V, 5 A, 0.026 ohm, TSMT, Surface Mount (Alt: RQ6E050AJTCR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
RQ6E050AJTCR
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Avnet Silica | Power MOSFET, N Channel, 30 V, 5 A, 0.026 ohm, TSMT, Surface Mount (Alt: RQ6E050AJTCR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 23 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
C1S625901680614
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Chip1Stop | Nch 30V 5A Middle Power MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 15 |
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$0.5110 | Buy Now |
Part Details for RQ6E050AJTCR
RQ6E050AJTCR CAD Models
RQ6E050AJTCR Part Data Attributes
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RQ6E050AJTCR
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RQ6E050AJTCR
ROHM Semiconductor
Small Signal Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | SC-95, SOT-457T, 6 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2016-02-24 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 40 pF | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |