Part Details for RRR030P03FRATL by ROHM Semiconductor
Overview of RRR030P03FRATL by ROHM Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Price & Stock for RRR030P03FRATL
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
10AC8939
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Newark | Mosfet, Aec-Q101, P-Ch, -30V, Tsmt, Transistor Polarity:P Channel, Continuous Drain Current Id:-3A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.055Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.5V, Power Rohs Compliant: Yes |Rohm RRR030P03FRATL RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.2120 / $0.5770 | Buy Now |
DISTI #
RRR030P03FRATL
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TME | Transistor: P-MOSFET, unipolar, -30V, -3A, Idm: -12A, 1W, SOT346 Min Qty: 3 | 0 |
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$0.2230 / $0.3090 | RFQ |
DISTI #
RRR030P03FRATL
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Avnet Silica | SMD MOSFETS 30V (Alt: RRR030P03FRATL) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 23 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for RRR030P03FRATL
RRR030P03FRATL CAD Models
RRR030P03FRATL Part Data Attributes
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RRR030P03FRATL
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RRR030P03FRATL
ROHM Semiconductor
Small Signal Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2016-06-23 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 70 pF | |
JESD-30 Code | R-PDSO-G3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |