Part Details for RS1E320GNTB by ROHM Semiconductor
Results Overview of RS1E320GNTB by ROHM Semiconductor
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Medical Imaging
Robotics and Drones
RS1E320GNTB Information
RS1E320GNTB by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RS1E320GNTB
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
RS1E320GNTBCT-ND
|
DigiKey | MOSFET N-CH 30V 32A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
|
$0.5075 / $1.9500 | Buy Now |
|
DISTI #
755-RS1E320GNTB
|
Mouser Electronics | MOSFETs 4.5V Drive Nch MOSFET RoHS: Compliant | 0 |
|
Order Now | |
|
DISTI #
67370816
|
Verical | Trans MOSFET N-CH 30V 32A 8-Pin HSOP EP T/R RoHS: Exempt Min Qty: 73 Package Multiple: 1 Date Code: 2101 | Americas - 2475 |
|
$0.9702 | Buy Now |
|
DISTI #
61867994
|
Verical | Trans MOSFET N-CH 30V 32A 8-Pin HSOP EP T/R RoHS: Exempt Min Qty: 73 Package Multiple: 1 Date Code: 2201 | Americas - 150 |
|
$0.9702 | Buy Now |
|
|
Quest Components | 2100 |
|
$0.9585 / $2.5560 | Buy Now | |
|
DISTI #
RS1E320GNTB
|
Avnet Silica | (Alt: RS1E320GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
Part Details for RS1E320GNTB
RS1E320GNTB CAD Models
RS1E320GNTB Part Data Attributes
|
|
RS1E320GNTB
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
RS1E320GNTB
ROHM Semiconductor
Power Field-Effect Transistor, 32A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Hsop-8 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 32 A | |
| Drain-source On Resistance-Max | 0.0024 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 128 A | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for RS1E320GNTB
This table gives cross-reference parts and alternative options found for RS1E320GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1E320GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RS1E350BNTB | ROHM Semiconductor | $1.0708 | Power Field-Effect Transistor, 35A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8 | RS1E320GNTB vs RS1E350BNTB |
| BSC0501NSI | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 29A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | RS1E320GNTB vs BSC0501NSI |
RS1E320GNTB Frequently Asked Questions (FAQ)
-
A thermal pad is recommended under the IC, and a 2-layer or 4-layer PCB with a thermal relief pattern is suggested to improve heat dissipation.
-
Use a stable power supply, ensure proper thermal design, and follow the recommended operating conditions to ensure stable operation over the entire operating temperature range.
-
The maximum allowable power dissipation is dependent on the ambient temperature and the thermal design of the PCB. Refer to the thermal resistance and power dissipation curves in the datasheet to determine the maximum allowable power dissipation for your specific application.
-
Yes, the RS1E320GNTB is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, additional testing and validation may be required to meet specific industry standards.
-
Follow proper ESD handling procedures during assembly and storage, and consider adding external ESD protection devices if necessary. The RS1E320GNTB has built-in ESD protection, but additional protection may be required depending on the application.