Part Details for RW1C026ZPT2CR by ROHM Semiconductor
Overview of RW1C026ZPT2CR by ROHM Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RW1C026ZPT2CR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RW1C026ZPT2CRCT-ND
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DigiKey | MOSFET P-CH 20V 2.5A 6WEMT Min Qty: 1 Lead time: 40 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1845 In Stock |
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$0.1459 / $0.5000 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C | 85 |
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$0.1280 / $0.4400 | Buy Now |
Part Details for RW1C026ZPT2CR
RW1C026ZPT2CR CAD Models
RW1C026ZPT2CR Part Data Attributes:
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RW1C026ZPT2CR
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RW1C026ZPT2CR
ROHM Semiconductor
Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, WEMT6, 6 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-F6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RW1C026ZPT2CR
This table gives cross-reference parts and alternative options found for RW1C026ZPT2CR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RW1C026ZPT2CR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDC6392S_NL | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | RW1C026ZPT2CR vs FDC6392S_NL |
| FDC6392S | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | RW1C026ZPT2CR vs FDC6392S |
| FDC6392SD84Z | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | RW1C026ZPT2CR vs FDC6392SD84Z |
| FDC6392SS62Z | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | RW1C026ZPT2CR vs FDC6392SS62Z |