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Transistors / Power Field-Effect Transistors / SCT025W120G3AG
Datasheets
SCT025W120G3AG by: STMicroelectronics

Power Field-Effect Transistor, 56A I(D), 1200V, 0.037ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Part Details for SCT025W120G3AG by STMicroelectronics

Results Overview of SCT025W120G3AG by STMicroelectronics

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SCT025W120G3AG Information

SCT025W120G3AG by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SCT025W120G3AG

Part # Distributor Description Stock Price Buy
DISTI # 07AM7717
Newark Mosfet, N-Channel, 1.2Kv, 56A, Hip247 Rohs Compliant: Yes |Stmicroelectronics SCT025W120G3AG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 3
  • 1 $26.9800
  • 5 $25.4600
  • 10 $23.9300
  • 25 $23.1400
  • 50 $22.3400
  • 100 $21.5500
$21.5500 / $26.9800 Buy Now
DISTI # 497-SCT025W120G3AG-ND
DigiKey AUTOMOTIVE-GRADE SILICON CARBIDE Min Qty: 1 Lead time: 17 Weeks Container: Tube 13
In Stock
  • 1 $20.7100
  • 30 $13.0523
  • 120 $11.8125
$11.8125 / $20.7100 Buy Now
DISTI # SCT025W120G3AG
Avnet Americas AUTOMOTIVE-GRADE SILICON CARBIDE POWER - Trays (Alt: SCT025W120G3AG) COO: Italy RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Lead time: 17 Weeks, 0 Days Container: Tray 0
  • 600 $13.5000
  • 1,200 $12.7703
  • 2,400 $12.4342
  • 4,800 $12.1154
  • 9,600 $11.8125
$11.8125 / $13.5000 Buy Now
DISTI # 511-SCT025W120G3AG
Mouser Electronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package RoHS: Compliant 506
  • 1 $20.7100
  • 10 $17.6600
  • 100 $17.3900
$17.3900 / $20.7100 Buy Now
STMicroelectronics Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package COO: Italy RoHS: Compliant Min Qty: 1 551
  • 1 $20.3000
  • 10 $17.3100
  • 100 $17.0400
$17.0400 / $20.3000 Buy Now
DISTI # SCT025W120G3AG
Avnet Silica AUTOMOTIVEGRADE SILICON CARBIDE POWER (Alt: SCT025W120G3AG) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 630
Buy Now
DISTI # SCT025W120G3AG
EBV Elektronik AUTOMOTIVEGRADE SILICON CARBIDE POWER (Alt: SCT025W120G3AG) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 18 Weeks, 0 Days EBV - 30
Buy Now

Part Details for SCT025W120G3AG

SCT025W120G3AG Part Data Attributes

Parametric Data
SCT025W120G3AG STMicroelectronics
Buy Now Datasheet
Compare Parts:
SCT025W120G3AG STMicroelectronics Power Field-Effect Transistor, 56A I(D), 1200V, 0.037ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Part Life Cycle Code Active
Reach Compliance Code Unknown
ECCN Code EAR99
Factory Lead Time 32 Weeks
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 56 A
Drain-source On Resistance-Max 0.037 Ω
FET Technology Metal-Oxide Semiconductor
Feedback Cap-Max (Crss) 12 Pf
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 200 °C
Operating Temperature-Min -55 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Flange Mount
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 388 W
Pulsed Drain Current-Max (IDM) 240 A
Reference Standard Aec-Q101
Surface Mount No
Terminal Form Through-Hole
Terminal Position Single
Transistor Application Switching
Transistor Element Material Silicon Carbide
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