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Part Details for SCT040W120G3-4AG by STMicroelectronics
Results Overview of SCT040W120G3-4AG by STMicroelectronics
- Distributor Offerings: (25 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SCT040W120G3-4AG Information
SCT040W120G3-4AG by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SCT040W120G3-4AG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
12AM9884
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Newark | Sic Mosfet, N-Ch, 1.2Kv, 40A, Hip247-4, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:40A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:4Pins, Rds(On) Test Voltage:18V, Power Dissipation:312W Rohs Compliant: Yes |Stmicroelectronics SCT040W120G3-4AG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 39 |
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$16.1900 / $21.2300 | Buy Now |
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DISTI #
497-SCT040W120G3-4AG-ND
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DigiKey | TO247-4 Min Qty: 1 Lead time: 17 Weeks Container: Tube |
473 In Stock |
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$8.7637 / $16.4100 | Buy Now |
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DISTI #
SCT040W120G3-4AG
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Avnet Americas | STMSCT040W120G3-4AG MCI MOS - Rail/Tube (Alt: SCT040W120G3-4AG) COO: China RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
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$8.7637 / $10.0157 | Buy Now |
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DISTI #
SCT040W120G3-4AG
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Avnet Americas | STMSCT040W120G3-4AG MCI MOS - Rail/Tube (Alt: SCT040W120G3-4AG) COO: China RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
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$8.7637 / $10.0157 | Buy Now |
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DISTI #
511-SCT040W120G3-4AG
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Mouser Electronics | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A RoHS: Compliant | 704 |
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$11.3200 / $16.3600 | Buy Now |
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DISTI #
E02:0323_18510532
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 40A Automotive AEC-Q101 4-Pin(4+Tab) HiP-247 Tube COO: China RoHS: Exempt Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks Date Code: 2513 | Europe - 30 |
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$8.7629 / $8.8932 | Buy Now |
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DISTI #
V36:1790_27159451
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 40A Automotive AEC-Q101 4-Pin(4+Tab) HiP-247 Tube COO: China RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2305 | Americas - 1 |
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$11.9500 / $13.1100 | Buy Now |
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STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package COO: Italy RoHS: Compliant Min Qty: 1 | 704 |
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$11.0900 / $16.0300 | Buy Now |
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Future Electronics | 1200 V 40 A 54 mOhm Single N-Channel Silicon Carbide Power MOSFET - HiP247-4 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 17 Weeks Container: Tube | 0Tube |
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$9.3500 / $9.5900 | Buy Now |
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Future Electronics | 1200 V 40 A 54 mOhm Single N-Channel Silicon Carbide Power MOSFET - HiP247-4 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 17 Weeks Container: Tube | 0Tube |
|
$9.3500 / $9.5900 | Buy Now |
Part Details for SCT040W120G3-4AG
SCT040W120G3-4AG CAD Models
SCT040W120G3-4AG Part Data Attributes
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SCT040W120G3-4AG
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
SCT040W120G3-4AG
STMicroelectronics
Power Field-Effect Transistor, 40A I(D), 1200V, 0.054ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Hip247-4 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 32 Weeks | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.054 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JESD-30 Code | R-PSFM-T4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 312 W | |
| Pulsed Drain Current-Max (IDM) | 179 A | |
| Reference Standard | Aec-Q101 | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon Carbide |
SCT040W120G3-4AG Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the SCT040W120G3-4AG is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
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The recommended gate drive voltage for the SCT040W120G3-4AG is between 10V and 15V.
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Yes, the SCT040W120G3-4AG is designed for high-reliability applications and is qualified according to the AEC-Q101 standard.
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To protect the device, use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes, and consider adding overcurrent protection using a fuse or a current sense resistor.