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Power Field-Effect Transistor
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SCT055HU65G3AG by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
83AK4853
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Newark | Sic Mosfet, N-Ch, 650V, 30A, Hu3Pak-7, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:650V, No. Of Pins:7Pins, Rds(On) Test Voltage:18V, Power Dissipation:185W Rohs Compliant: Yes |Stmicroelectronics SCT055HU65G3AG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 11 |
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$8.7300 / $13.9000 | Buy Now |
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DISTI #
497-SCT055HU65G3AGCT-ND
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DigiKey | AUTOMOTIVE-GRADE SILICON CARBIDE Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
252 In Stock |
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$7.1250 / $13.9800 | Buy Now |
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DISTI #
SCT055HU65G3AG
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Avnet Americas | - Tape and Reel (Alt: SCT055HU65G3AG) COO: Japan RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Lead time: 18 Weeks, 0 Days Container: Tape & Reel | 0 |
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$7.1250 / $8.1429 | Buy Now |
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DISTI #
SCT055HU65G3AG
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Avnet Americas | - Tape and Reel (Alt: SCT055HU65G3AG) COO: Japan RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Lead time: 18 Weeks, 0 Days Container: Tape & Reel | 0 |
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$7.1250 / $8.1429 | Buy Now |
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DISTI #
511-SCT055HU65G3AG
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Mouser Electronics | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A RoHS: Compliant | 236 |
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$8.7300 / $13.9000 | Buy Now |
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STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package COO: Japan RoHS: Compliant Min Qty: 1 | 236 |
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$8.6000 / $13.6200 | Buy Now |
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Future Electronics | PTD NEW MAT & PWR SOLUTION 400 - 800 V Sic PMOSFET RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Lead time: 20 Weeks Container: Reel | 0Reel |
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$7.6000 | Buy Now |
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DISTI #
SCT055HU65G3AG
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TME | Transistor: N-MOSFET, SiC, unipolar, 650V, 30A, Idm: 132A, 185W Min Qty: 1 | 0 |
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$10.7000 / $13.5500 | RFQ |
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ComSIT USA | Power Field-Effect Transistor ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
SCT055HU65G3AG
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Avnet Silica | (Alt: SCT055HU65G3AG) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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SCT055HU65G3AG
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
SCT055HU65G3AG
STMicroelectronics
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 40 Weeks | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Peak Reflow Temperature (Cel) | 260 | |
| Terminal Finish | Matte Tin (Sn) - Annealed |
The recommended operating voltage range for the SCT055HU65G3AG is 1.14V to 1.26V.
STMicroelectronics recommends using a thermal interface material (TIM) and a heat sink to ensure proper heat dissipation. The thermal design should be optimized to keep the junction temperature below 125°C.
The maximum current rating for the SCT055HU65G3AG is 65A. However, it's recommended to operate the device within the specified current rating to ensure reliability and prevent overheating.
STMicroelectronics recommends using an external overcurrent protection circuit, such as a fuse or a current sense resistor, to detect and respond to overcurrent conditions. The device also has a built-in overcurrent protection feature that can be enabled through the control pins.
STMicroelectronics recommends following the recommended PCB layout and routing guidelines provided in the datasheet, including using a solid ground plane, minimizing trace lengths, and using a decoupling capacitor to reduce noise and ensure signal integrity.