Datasheets
SCT3060ALHRC11 by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for SCT3060ALHRC11 by ROHM Semiconductor

Results Overview of SCT3060ALHRC11 by ROHM Semiconductor

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Applications Automotive

SCT3060ALHRC11 Information

SCT3060ALHRC11 by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SCT3060ALHRC11

Part # Distributor Description Stock Price Buy
DISTI # 02AH4684
Newark Sic Mosfet, N-Ch, 650V, 39A, To-247N-3, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:39A, Drain Source Voltage Vds:650V, No. Of Pins:3Pins, Rds(On) Test Voltage:18V, Power Dissipation:165W Rohs Compliant: Yes |Rohm SCT3060ALHRC11 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 596
  • 1 $24.3200
  • 10 $16.3900
  • 25 $16.1300
  • 50 $15.8800
  • 100 $15.6200
  • 250 $15.6200
  • 900 $15.6100
$15.6100 / $24.3200 Buy Now
DISTI # SCT3060ALHRC11-ND
DigiKey SICFET N-CH 650V 39A TO247N Min Qty: 1 Lead time: 27 Weeks Container: Tube 437
In Stock
  • 1 $24.3200
  • 30 $16.0050
  • 120 $15.6137
$15.6137 / $24.3200 Buy Now
DISTI # 755-SCT3060ALHRC11
Mouser Electronics SiC MOSFETs 650V 39A 165W SIC 60mOhm TO-247N RoHS: Compliant 428
  • 1 $24.3200
  • 10 $16.0100
  • 100 $15.6200
  • 450 $15.6100
$15.6100 / $24.3200 Buy Now
DISTI # 77816689
Verical Trans MOSFET N-CH SiC 650V 39A Automotive 3-Pin(3+Tab) TO-247N Tube RoHS: Compliant Min Qty: 4 Package Multiple: 1 Date Code: 2101 Americas - 450
  • 4 $19.0983
  • 5 $18.4336
  • 10 $17.8711
  • 20 $17.3911
  • 50 $16.9786
  • 100 $16.6220
  • 250 $16.3121
$16.3121 / $19.0983 Buy Now
DISTI # 69695620
Verical Trans MOSFET N-CH SiC 650V 39A Automotive 3-Pin(3+Tab) TO-247N Tube RoHS: Compliant Min Qty: 4 Package Multiple: 1 Date Code: 2314 Americas - 390
  • 4 $24.2000
  • 5 $23.8000
  • 10 $16.0000
  • 50 $15.6000
  • 100 $14.0000
  • 200 $13.6000
$13.6000 / $24.2000 Buy Now
DISTI # 62387511
Verical Trans MOSFET N-CH SiC 650V 39A Automotive 3-Pin(3+Tab) TO-247N Tube RoHS: Compliant Min Qty: 4 Package Multiple: 1 Date Code: 2101 Americas - 186
  • 3 $19.0983
  • 4 $23.8336
  • 5 $18.4336
  • 10 $17.8711
  • 20 $17.3911
  • 50 $16.9786
  • 100 $16.6220
$16.6220 / $23.8336 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 39A I(D), 650V, 0.078OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET, TO-247 508
  • 1 $26.3860
  • 238 $20.4492
  • 490 $19.7895
$19.7895 / $26.3860 Buy Now
DISTI # SCT3060ALHRC11
TME Transistor: N-MOSFET, SiC, unipolar, 650V, 39A, Idm: 97A, 165W, TO247 Min Qty: 1 0
  • 1 $26.3500
  • 3 $23.8000
  • 10 $20.7800
  • 30 $18.8100
$18.8100 / $26.3500 RFQ
Ameya Holding Limited   Min Qty: 1 8-Authorized Distributor
  • 1 $26.9200
  • 10 $23.6600
  • 120 $20.9300
  • 450 $18.0995
$18.0995 / $26.9200 Buy Now
DISTI # SCT3060ALHRC11
Chip One Stop Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube 390
  • 1 $24.2000
  • 5 $23.8000
  • 10 $16.0000
  • 50 $15.6000
  • 100 $14.0000
  • 200 $13.6000
  • 900 $13.1000
  • 1,800 $11.6000
$11.6000 / $24.2000 Buy Now
LCSC 650V 39A 165W 78m18V13A One N-channel TO-247N Single FETs MOSFETs RoHS 3
  • 1 $22.8697
  • 10 $22.1899
$22.1899 / $22.8697 Buy Now

Part Details for SCT3060ALHRC11

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SCT3060ALHRC11 Part Data Attributes

SCT3060ALHRC11 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
SCT3060ALHRC11 ROHM Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Reach Compliance Code Not Compliant
ECCN Code EAR99
Date Of Intro 2018-12-11
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 39 A
Drain-source On Resistance-Max 0.078 Ω
FET Technology Metal-Oxide Semiconductor
Feedback Cap-Max (Crss) 24 Pf
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 175 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Flange Mount
Peak Reflow Temperature (Cel) 265
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 165 W
Pulsed Drain Current-Max (IDM) 97 A
Reference Standard Aec-Q101
Surface Mount No
Terminal Finish Tin (Sn)
Terminal Form Through-Hole
Terminal Position Single
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application Switching
Transistor Element Material Silicon Carbide

Alternate Parts for SCT3060ALHRC11

This table gives cross-reference parts and alternative options found for SCT3060ALHRC11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCT3060ALHRC11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
C3M0060065K Wolfspeed $8.3700 Power Field-Effect Transistor, 37A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, SCT3060ALHRC11 vs C3M0060065K
MSC060SMA070B4 Microsemi Corporation (now Microchip) Check for Price Power Field-Effect Transistor, SCT3060ALHRC11 vs MSC060SMA070B4
C3M0060065D Cree, Inc. Check for Price Power Field-Effect Transistor, SCT3060ALHRC11 vs C3M0060065D
SCT3060ALC11 ROHM Semiconductor Check for Price Power Field-Effect Transistor, 39A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN SCT3060ALHRC11 vs SCT3060ALC11
equivalents icon

SCT3060ALHRC11 Frequently Asked Questions (FAQ)

  • A thermal pad is recommended under the IC to improve heat dissipation. A 2-layer or 4-layer PCB with a solid ground plane is also recommended to reduce thermal resistance.

  • Ensure that the input voltage is within the recommended range, and that the device is properly decoupled with a 10uF capacitor. Also, ensure that the thermal design is optimized to keep the junction temperature below 125°C.

  • The maximum allowed current for the output pins is 50mA. Exceeding this current may cause damage to the device.

  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to protect against electrostatic discharge.

  • The recommended storage temperature range is -40°C to 125°C. Storage outside this range may affect the device's reliability and performance.

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