Part Details for SD2922 by STMicroelectronics
Results Overview of SD2922 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (9 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SD2922 Information
SD2922 by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SD2922
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Trans RF MOSFET N-CH 125V 40A 5-Pin Case M-244 | 217 |
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RFQ | |
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Quest Components | 60 |
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$85.8000 / $101.4000 | Buy Now |
Part Details for SD2922
SD2922 CAD Models
SD2922 Part Data Attributes
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SD2922
STMicroelectronics
Buy Now
Datasheet
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SD2922
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Obsolete | |
| Package Description | 0.400 X 0.860 Inch, Plastic, M244, 4 Pin | |
| Pin Count | 4 | |
| ECCN Code | EAR99 | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 125 V | |
| Drain Current-Max (ID) | 40 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 27 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDFM-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Gain-Min (Gp) | 12.5 Db | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
Alternate Parts for SD2922
This table gives cross-reference parts and alternative options found for SD2922. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SD2922, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| MRF151G | TE Connectivity | Check for Price | Power Field-Effect Transistor, 40A I(D), N-Channel, Metal-oxide Semiconductor FET | SD2922 vs MRF151G |
| MRF176GV | TE Connectivity | Check for Price | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | SD2922 vs MRF176GV |
| SD2932 | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | SD2922 vs SD2932 |
| MRF151G | Motorola Semiconductor Products | Check for Price | RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | SD2922 vs MRF151G |
| TP1940 | Motorola Semiconductor Products | Check for Price | RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | SD2922 vs TP1940 |
| BLF278 | Advanced Semiconductor Inc | Check for Price | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | SD2922 vs BLF278 |
| BLF278 | NXP Semiconductors | Check for Price | RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | SD2922 vs BLF278 |
| MRF151G | MACOM | Check for Price | Power Field-Effect Transistor, 40A I(D), N-Channel, Metal-oxide Semiconductor FET | SD2922 vs MRF151G |
| VFT300-50 | Advanced Semiconductor Inc | Check for Price | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | SD2922 vs VFT300-50 |
SD2922 Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout in the application note AN5275, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
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The input capacitor values depend on the input voltage, output voltage, and desired output ripple. A general guideline is to use a minimum of 10uF ceramic capacitors with a voltage rating of at least 1.5 times the input voltage. However, it's recommended to consult the application note AN5275 and perform simulations to determine the optimal capacitor values for your specific design.
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The SD2922 is rated for operation up to 125°C ambient temperature, but it's essential to consider the thermal management and heat dissipation in your design to ensure reliable operation. A good thermal design can help reduce the junction temperature and increase the overall reliability of the device.
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The SD2922 has built-in OVP and UVP features, but they require external resistors and capacitors to set the threshold voltages. Consult the datasheet and application note AN5275 for guidance on implementing OVP and UVP in your design.
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The output capacitor type and value depend on the output voltage, output current, and desired output ripple. A general guideline is to use a minimum of 10uF ceramic capacitors with a voltage rating of at least 1.5 times the output voltage. However, it's recommended to consult the application note AN5275 and perform simulations to determine the optimal capacitor values for your specific design.