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Transistors RF Power Field-Effect Transistors SD2931-10W

SD2931-10W
STMicroelectronics
Description: RF power transistor: HF/VHF/UHF N-channel power MOSFETs

Overview of SD2931-10W by STMicroelectronics

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 10 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Audio and Video Systems

Available Datasheets

Part # Manufacturer Description Datasheet
CLF1G0060S-10 Rochester Electronics LLC CLF1G0060S-10 - 10W Broadband RF power GaN HEMT
CLF1G0060-10 Rochester Electronics LLC CLF1G0060-10 - 10W Broadband RF power GaN HEMT
TM-10 Rochester Electronics TM-10 - 10W Broadband RF power GaN HEMT (Custom)

Price & Stock for SD2931-10W by STMicroelectronics

Part # Manufacturer Description Stock Price Buy
DISTI # 99W9410
Newark Rf Fet Transistor, 125 V, 20 A, 389 W, 230 Mhz, M174 Rohs Compliant: Yes |Stmicroelectronics SD2931-10W RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $79.5800
  • 5 $77.5200
  • 10 $75.4600
  • 25 $73.3300
  • 50 $72.3900
  • 100 $69.5100
$69.5100 / $79.5800 Buy Now
DISTI # 497-13080-ND
DigiKey RF MOSFET 50V M174 Min Qty: 1 Lead time: 28 Weeks Container: Tray 50
In Stock
  • 1 $79.5800
  • 10 $75.6040
  • 25 $73.6144
  • 100 $68.1431
$68.1431 / $79.5800 Buy Now
DISTI # SD2931-10W
Avnet Americas Transistor RF FET N-CH 125V 20A 175MHz 4-Pin Case M-174 Tray - Boxed Product (Development Kits) (Alt: SD2931-10W) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 28 Weeks, 0 Days Container: Box 0
  • 50 $66.9636
  • 100 $64.7933
  • 200 $64.4644
  • 300 $63.7455
  • 400 $63.4186
$63.4186 / $66.9636 Buy Now
DISTI # 511-SD2931-10W
Mouser Electronics RF MOSFET Transistors RF PWR N-Ch MOS 150W 14dB 175MHz RoHS: Compliant 320
  • 1 $79.5800
  • 10 $75.4600
  • 25 $73.3300
  • 50 $72.3900
  • 100 $69.5100
$69.5100 / $79.5800 Buy Now
STMicroelectronics RF power transistor: HF/VHF/UHF N-channel power MOSFETs RoHS: Compliant Min Qty: 1 320
  • 1 $77.9900
  • 10 $73.9500
  • 25 $71.8600
  • 50 $70.9400
  • 100 $68.1200
  • 250 $66.7700
  • 500 $66.5500
$66.5500 / $77.9900 Buy Now
Future Electronics N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174 RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Lead time: 28 Weeks Container: Tray 0
Tray
  • 25 $66.4800
  • 50 $65.6600
$65.6600 / $66.4800 Buy Now
Future Electronics N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174 RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Lead time: 28 Weeks Container: Tray 0
Tray
  • 25 $66.6300
  • 50 $66.1400
  • 75 $65.6600
$65.6600 / $66.6300 Buy Now
Future Electronics N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174 RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Lead time: 28 Weeks Container: Tray 0
Tray
  • 25 $66.6300
  • 50 $66.1400
  • 75 $65.6600
$65.6600 / $66.6300 Buy Now
DISTI # SD2931-10W
Avnet Silica Transistor RF FET N-CH 125V 20A 175MHz 4-Pin Case M-174 Tray (Alt: SD2931-10W) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # SD2931-10W
EBV Elektronik Transistor RF FET N-CH 125V 20A 175MHz 4-Pin Case M-174 Tray (Alt: SD2931-10W) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 29 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for SD2931-10W by STMicroelectronics
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There are no models available for this part yet.

Part Data Attributes for SD2931-10W by STMicroelectronics
Parametric Data

SD2931-10W
STMicroelectronics
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
STMICROELECTRONICS
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
28 Weeks
Samacsys Manufacturer
STMicroelectronics
Configuration
SINGLE
DS Breakdown Voltage-Min
125 V
Drain Current-Max (ID)
20 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
O-PRFM-F4
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
200 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
ROUND
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
389 W
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
RADIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
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  1. SD2931-10W
    STMicroelectronics
    RF power transistor: HF/VHF/UHF N-channel power MOSFETs
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