Part Details for SD56120 by STMicroelectronics
Results Overview of SD56120 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Industrial Automation
Aerospace and Defense
Energy and Power Systems
Electronic Manufacturing
SD56120 Information
SD56120 by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SD56120
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-5474-ND
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DigiKey | RF MOSFET LDMOS 28V M246 Min Qty: 60 Container: Box |
0 Box |
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$153.8115 | Buy Now |
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Vyrian | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 12012 |
|
RFQ |
Part Details for SD56120
SD56120 CAD Models
SD56120 Part Data Attributes
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SD56120
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
SD56120
STMicroelectronics
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Plastic, M246, 4 Pin | |
| Pin Count | 4 | |
| ECCN Code | EAR99 | |
| Case Connection | Source | |
| Configuration | Common Source, 2 Elements | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 14 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 2.8 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDFM-F4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 217 W | |
| Power Gain-Min (Gp) | 14 Db | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
Alternate Parts for SD56120
This table gives cross-reference parts and alternative options found for SD56120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SD56120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MRFE6VP6300HR5 | NXP Semiconductors | $215.0395 | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | SD56120 vs MRFE6VP6300HR5 |
| SD57120 | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | SD56120 vs SD57120 |
| SD56120M | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | SD56120 vs SD56120M |
SD56120 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the SD56120 is -40°C to 125°C.
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To configure the SD56120 for low-power mode, set the PWRMODE pin to '0' and ensure the device is in standby mode. Additionally, disable any unnecessary peripherals and reduce the clock frequency to minimize power consumption.
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The SD56120 supports a maximum data transfer rate of up to 104 MHz, which translates to approximately 832 Mbps.
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Yes, the SD56120 is compatible with a 1.8V power supply. However, ensure that the input voltage is within the recommended range of 1.65V to 1.95V to maintain optimal performance.
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To troubleshoot I2C interface issues with the SD56120, check the I2C clock frequency, ensure proper pull-up resistors are used, and verify that the slave address is correctly configured. Also, use a logic analyzer or oscilloscope to inspect the I2C bus signals.