Part Details for SGH15N120RUFTU by Fairchild Semiconductor Corporation
Results Overview of SGH15N120RUFTU by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SGH15N120RUFTU Information
SGH15N120RUFTU by Fairchild Semiconductor Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SGH15N120RUFTU
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-SGH15N120RUFTU-ND
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DigiKey | IGBT 1200V 24A TO-3P Min Qty: 66 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2889 In Stock |
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$4.5100 | Buy Now |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 24A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant Status: Obsolete Min Qty: 1 | 2889 |
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$2.8900 / $3.6100 | Buy Now |
Part Details for SGH15N120RUFTU
SGH15N120RUFTU CAD Models
SGH15N120RUFTU Part Data Attributes
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SGH15N120RUFTU
Fairchild Semiconductor Corporation
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Datasheet
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SGH15N120RUFTU
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 24A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-3P | |
| Package Description | To-3p, 3 Pin | |
| Pin Count | 2 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Low Conduction Loss, High Speed Switching | |
| Collector Current-Max (IC) | 24 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | Single | |
| Fall Time-Max (tf) | 400 Ns | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Gate-Emitter Voltage-Max | 25 V | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 72 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Motor Control | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Nom (toff) | 280 Ns | |
| Turn-on Time-Nom (ton) | 90 Ns |
Alternate Parts for SGH15N120RUFTU
This table gives cross-reference parts and alternative options found for SGH15N120RUFTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGH15N120RUFTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SGS23N60UFDTU | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | SGH15N120RUFTU vs SGS23N60UFDTU |
| SGS13N60UF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | SGH15N120RUFTU vs SGS13N60UF |
| SGH15N60RUF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | SGH15N120RUFTU vs SGH15N60RUF |
| SGH25N120RUF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | SGH15N120RUFTU vs SGH25N120RUF |
| SGS6N60UF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | SGH15N120RUFTU vs SGS6N60UF |
| SGH10N60RUFTU | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | SGH15N120RUFTU vs SGH10N60RUFTU |
| SGS6N60UFD | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | SGH15N120RUFTU vs SGS6N60UFD |
| SGS23N60UFDTU | onsemi | Check for Price | 600V, PT IGBT, TO-220-3 FullPak, 1000-TUBE | SGH15N120RUFTU vs SGS23N60UFDTU |
| SGH5N120RUFD | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | SGH15N120RUFTU vs SGH5N120RUFD |
| SGH20N120RUFD | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | SGH15N120RUFTU vs SGH20N120RUFD |
SGH15N120RUFTU Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the SGH15N120RUFTU is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation (Pd) of the device, which is 250W for the SGH15N120RUFTU.
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The recommended gate drive voltage for the SGH15N120RUFTU is between 10V and 15V, with a maximum gate current (Ig) of 2A. However, the actual gate drive voltage and current may vary depending on the specific application and switching frequency.
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To protect the device from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
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To minimize parasitic inductance and ensure proper operation, it's recommended to use a low-inductance PCB layout with short, wide traces and a solid ground plane. The device should be placed close to the heat sink, and the gate drive circuitry should be isolated from the power circuitry.