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SGS23N60UFD by:

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN

Part Details for SGS23N60UFD by Fairchild Semiconductor Corporation

Overview of SGS23N60UFD by Fairchild Semiconductor Corporation

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Applications Automotive

Part Details for SGS23N60UFD

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SGS23N60UFD Part Data Attributes:

SGS23N60UFD Fairchild Semiconductor Corporation
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SGS23N60UFD Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description TO-220F, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Case Connection ISOLATED
Collector Current-Max (IC) 23 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 250 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 29 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 320 ns
Turn-on Time-Nom (ton) 55 ns

Alternate Parts for SGS23N60UFD

This table gives cross-reference parts and alternative options found for SGS23N60UFD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGS23N60UFD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STGD3NB60HD 10A, 600V, N-CHANNEL IGBT, TO-252AA, DPAK-3 STMicroelectronics SGS23N60UFD vs STGD3NB60HD
SGS6N60UF Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN Fairchild Semiconductor Corporation SGS23N60UFD vs SGS6N60UF
HGT1S7N60C3D Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA Harris Semiconductor SGS23N60UFD vs HGT1S7N60C3D
SGH10N60RUF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Fairchild Semiconductor Corporation SGS23N60UFD vs SGH10N60RUF
STGD7NB60KT4 14A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3 STMicroelectronics SGS23N60UFD vs STGD7NB60KT4
SGH20N120RUFTU Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN Fairchild Semiconductor Corporation SGS23N60UFD vs SGH20N120RUFTU
SGH10N120RUFD Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN Fairchild Semiconductor Corporation SGS23N60UFD vs SGH10N120RUFD
FGB20N6S2D Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation SGS23N60UFD vs FGB20N6S2D
SGH5N120RUFDTU Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN Fairchild Semiconductor Corporation SGS23N60UFD vs SGH5N120RUFDTU
STGD7NB60K 14A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3 STMicroelectronics SGS23N60UFD vs STGD7NB60K

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