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SGS6N60UF by:

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN

Part Details for SGS6N60UF by Fairchild Semiconductor Corporation

Overview of SGS6N60UF by Fairchild Semiconductor Corporation

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Part Details for SGS6N60UF

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SGS6N60UF Part Data Attributes

SGS6N60UF Fairchild Semiconductor Corporation
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SGS6N60UF Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description TO-220F, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Case Connection ISOLATED
Collector Current-Max (IC) 6 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 300 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 9 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 202 ns
Turn-on Time-Nom (ton) 54 ns

Alternate Parts for SGS6N60UF

This table gives cross-reference parts and alternative options found for SGS6N60UF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGS6N60UF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SGH5N120RUFDTU Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN Fairchild Semiconductor Corporation SGS6N60UF vs SGH5N120RUFDTU
SGH20N60RUF Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Fairchild Semiconductor Corporation SGS6N60UF vs SGH20N60RUF
SGH10N120RUFDTU Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN Fairchild Semiconductor Corporation SGS6N60UF vs SGH10N120RUFDTU
HGT1S7N60C3D Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA Harris Semiconductor SGS6N60UF vs HGT1S7N60C3D
SGH10N120RUFD Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN Fairchild Semiconductor Corporation SGS6N60UF vs SGH10N120RUFD
HGT1S7N60C3D Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3PIN Fairchild Semiconductor Corporation SGS6N60UF vs HGT1S7N60C3D
STGD3NB60HD 10A, 600V, N-CHANNEL IGBT, TO-252AA, DPAK-3 STMicroelectronics SGS6N60UF vs STGD3NB60HD
HGT1S7N60C3D TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,14A I(C),TO-262AA Intersil Corporation SGS6N60UF vs HGT1S7N60C3D
SGS6N60UFDTU Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN Rochester Electronics LLC SGS6N60UF vs SGS6N60UFDTU
SGH20N60RUFTU Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Fairchild Semiconductor Corporation SGS6N60UF vs SGH20N60RUFTU

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