There are no models available for this part yet.
Overview of HGT1S7N60C3D by Intersil Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for HGT1S7N60C3D by Intersil Corporation
Part Data Attributes for HGT1S7N60C3D by Intersil Corporation
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|---|---|
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Rohs Code
|
No
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Part Life Cycle Code
|
Transferred
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Ihs Manufacturer
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INTERSIL CORP
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Reach Compliance Code
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not_compliant
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ECCN Code
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EAR99
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Collector Current-Max (IC)
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14 A
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Collector-Emitter Voltage-Max
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600 V
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Fall Time-Max (tf)
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275 ns
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Gate-Emitter Thr Voltage-Max
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6 V
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Gate-Emitter Voltage-Max
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20 V
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JESD-609 Code
|
e0
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Operating Temperature-Max
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150 °C
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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60 W
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Surface Mount
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NO
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Terminal Finish
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Tin/Lead (Sn/Pb)
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Alternate Parts for HGT1S7N60C3D
This table gives cross-reference parts and alternative options found for HGT1S7N60C3D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S7N60C3D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S7N60C3D | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3PIN | Fairchild Semiconductor Corporation | HGT1S7N60C3D vs HGT1S7N60C3D |
| SGH5N120RUFDTU | Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | HGT1S7N60C3D vs SGH5N120RUFDTU |
| SGH15N120RUFDTU | Insulated Gate Bipolar Transistor, 24A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | HGT1S7N60C3D vs SGH15N120RUFDTU |
| SGH10N60RUFTU | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | HGT1S7N60C3D vs SGH10N60RUFTU |
| SGH25N120RUF | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | HGT1S7N60C3D vs SGH25N120RUF |
| SGH20N120RUFTU | Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | HGT1S7N60C3D vs SGH20N120RUFTU |
| STGD7NB60K | 14A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3 | STMicroelectronics | HGT1S7N60C3D vs STGD7NB60K |
| SGS13N60UFTU | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | HGT1S7N60C3D vs SGS13N60UFTU |
| STGD7NB60KT4 | 14A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3 | STMicroelectronics | HGT1S7N60C3D vs STGD7NB60KT4 |
| SGS23N60UFDTU | 600V, PT IGBT, 1000-TUBE | onsemi | HGT1S7N60C3D vs SGS23N60UFDTU |