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Small Signal Field-Effect Transistor, 0.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
65K1914
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Newark | N Channel Mosfet, 30V, 640Ma, Sc-70, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:640Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI1302DL-T1-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4746 |
|
$0.1490 / $0.1620 | Buy Now |
DISTI #
51K6941
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Newark | Mosfet Transistor, N Channel, 640 Ma, 30 V, 0.41 Ohm, 10 V, 1 V |Vishay SI1302DL-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1150 / $0.1870 | Buy Now |
DISTI #
81AC9911
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Newark | 30V N-Ch Trench Rohs Compliant: No |Vishay SI1302DL-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1190 | Buy Now |
DISTI #
61M9759
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Newark | Mosfet, N, 3-Sc-70, Transistor Polarity:N Channel, Continuous Drain Current Id:640Ma, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.41Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, Power Dissipation Pd:310Mw, Rohs Compliant: Yes |Vishay SI1302DL-T1-E3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.2300 / $0.4500 | Buy Now |
DISTI #
SI1302DL-T1-E3
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Avnet Americas | Trans MOSFET N-CH 30V 0.6A 3-Pin SC-70 T/R - Tape and Reel (Alt: SI1302DL-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 3000 |
|
$0.1183 | Buy Now |
DISTI #
65K1914
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Avnet Americas | Trans MOSFET N-CH 30V 0.6A 3-Pin SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 65K1914) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 7 Weeks, 3 Days Container: Ammo Pack | 4746 Partner Stock |
|
$0.2230 / $0.4200 | Buy Now |
DISTI #
781-SI1302DL-E3
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Mouser Electronics | MOSFETs SC70 N CHAN 30V RoHS: Compliant | 138227 |
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$0.1180 / $0.4200 | Buy Now |
|
Future Electronics | Single N-Channel 30 V 0.48 Ohms Surface Mount Power Mosfet - SC-70-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
|
$0.1160 / $0.1260 | Buy Now |
|
Future Electronics | Single N-Channel 30 V 0.48 Ohms Surface Mount Power Mosfet - SC-70-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Container: Reel | 0Reel |
|
$0.1160 / $0.1260 | Buy Now |
|
Future Electronics | Single N-Channel 30 V 0.48 Ohms Surface Mount Power Mosfet - SC-70-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Container: Reel | 0Reel |
|
$0.1160 / $0.1260 | Buy Now |
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SI1302DL-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI1302DL-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SC-70, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 0.6 A | |
Drain-source On Resistance-Max | 0.48 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.28 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI1302DL-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1302DL-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI1302DL-T1-GE3 | Small Signal Field-Effect Transistor, 0.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 3 PIN | Vishay Intertechnologies | SI1302DL-T1-E3 vs SI1302DL-T1-GE3 |