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Transistors Small Signal Field-Effect Transistors SI2301BDS-T1-GE3

SI2301BDS-T1-GE3
Description: Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN

Overview of SI2301BDS-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI2301BDS-T1-GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 33P5162
Newark P Channel Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:2.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:950Mv, Msl:- Rohs Compliant: Yes |Vishay SI2301BDS-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.1940
  • 5,000 $0.1900
  • 10,000 $0.1750
  • 20,000 $0.1630
  • 30,000 $0.1520
  • 50,000 $0.1460
$0.1460 / $0.1940 Buy Now
DISTI # 84R8020
Newark P Channel Mosfet, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:2.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:950Mv, Power Dissipation:700Mw Rohs Compliant: Yes |Vishay SI2301BDS-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $0.2100
$0.2100 Buy Now
DISTI # SI2301BDS-T1-GE3
Avnet Americas Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2301BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
  • 3,000 $0.1126
$0.1126 Buy Now
Future Electronics P-CHANNEL 2.5-V (G-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 3000
Reel
  • 3,000 $0.1380
  • 6,000 $0.1350
  • 9,000 $0.1340
  • 15,000 $0.1320
  • 30,000 $0.1280
$0.1280 / $0.1380 Buy Now
DISTI # SI2301BDS-T1-GE3
TTI MOSFETs 20V 2.4A 0.9W 100mohm @ 4.5V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.1520
  • 6,000 $0.1490
  • 9,000 $0.1460
  • 24,000 $0.1430
  • 45,000 $0.1400
  • 300,000 $0.1380
$0.1380 / $0.1520 Buy Now
DISTI # SI2301BDS-T1-GE3
TME Transistor: P-MOSFET, unipolar, -20V, -2.2A, Idm: -10A, 0.45W, SOT23 Min Qty: 1 1887
  • 1 $0.4580
  • 10 $0.3820
  • 25 $0.3350
  • 100 $0.2790
  • 250 $0.2260
  • 500 $0.2000
  • 1,000 $0.1790
  • 3,000 $0.1560
$0.1560 / $0.4580 Buy Now
DISTI # SI2301BDS-T1-GE3
Avnet Asia Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R (Alt: SI2301BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 0
RFQ
DISTI # C1S803601819123
Chip1Stop Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R RoHS: Compliant pbFree: Yes 3000
  • 3,000 $0.1820
$0.1820 Buy Now
DISTI # C1S806000533416
Chip1Stop Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R RoHS: Compliant pbFree: Yes 179
  • 10 $0.2220
  • 25 $0.2060
  • 100 $0.1520
$0.1520 / $0.2220 Buy Now
DISTI # SI2301BDS-T1-GE3
EBV Elektronik Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R (Alt: SI2301BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 20V 2.2A 100m2.8A4.5V 700mW 950mV250uA 1 Piece P-Channel SOT-23-3 MOSFETs ROHS 2901
  • 1 $0.3994
  • 10 $0.3289
  • 30 $0.2992
  • 100 $0.2616
  • 500 $0.2444
  • 1,000 $0.2350
$0.2350 / $0.3994 Buy Now

CAD Models for SI2301BDS-T1-GE3 by Vishay Intertechnologies
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Part Data Attributes for SI2301BDS-T1-GE3 by Vishay Intertechnologies
Parametric Data

SI2301BDS-T1-GE3
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
TO-236, SOT-23, 3 PIN
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
2.2 A
Drain-source On Resistance-Max
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
65 pF
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Element Material
SILICON
Want to compare parts?
  1. SI2301BDS-T1-GE3
    Vishay Intertechnologies
    Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
    VS

Alternate Parts for SI2301BDS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2301BDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2301BDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SI2301BDS-T1-E3 Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN Vishay Intertechnologies SI2301BDS-T1-GE3 vs SI2301BDS-T1-E3
SI2301BDS-T1-GE3 TRANSISTOR 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal Vishay Siliconix SI2301BDS-T1-GE3 vs SI2301BDS-T1-GE3
SI2301BDS-T1 Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Vishay Siliconix SI2301BDS-T1-GE3 vs SI2301BDS-T1
Part Number Description Manufacturer Compare
SI2301BDS-T1-E3 Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN Vishay Intertechnologies SI2301BDS-T1-GE3 vs SI2301BDS-T1-E3
LT2301 Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 Lite-On Semiconductor Corporation SI2301BDS-T1-GE3 vs LT2301
SI2301BDS-T1 Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Vishay Siliconix SI2301BDS-T1-GE3 vs SI2301BDS-T1
SSM3J304T TRANSISTOR 2300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal Toshiba America Electronic Components SI2301BDS-T1-GE3 vs SSM3J304T
SI2301BDS-T1-GE3 TRANSISTOR 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal Vishay Siliconix SI2301BDS-T1-GE3 vs SI2301BDS-T1-GE3

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