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Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
55R1910
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Newark | Mosfet, P-Ch, 30V, 3.5A, Sot23, Transistor Polarity:P Channel, Continuous Drain Current Id:-3.5A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):73Mohm, Rds(On) Test Voltage Vgs:-10V, Power Dissipation Pd:1.1W, Operating Rohs Compliant: Yes |Vishay SI2307CDS-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 43370 |
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$0.3480 / $0.5350 | Buy Now |
DISTI #
96AJ0107
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Newark | Mosfet, P-Ch, 30V, 2.7A, To-236 Rohs Compliant: Yes |Vishay SI2307CDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 21000 |
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$0.1720 / $0.1900 | Buy Now |
DISTI #
81AC9912
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Newark | P-Channel 30-V (D-S) Mosfet Rohs Compliant: No |Vishay SI2307CDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1500 / $0.1760 | Buy Now |
DISTI #
85W0174
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Newark | P Channel Mosfet, -30V, 2.7A To-236, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:2.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3Vrohs Compliant: Yes |Vishay SI2307CDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2250 | Buy Now |
DISTI #
SI2307CDS-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2307CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
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$0.1145 / $0.1454 | Buy Now |
DISTI #
SI2307CDS-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2307CDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.1145 / $0.1454 | Buy Now |
DISTI #
781-SI2307CDS-T1-GE3
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Mouser Electronics | MOSFET -30V Vds 20V Vgs SOT-23 RoHS: Compliant | 105980 |
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$0.1340 / $0.4900 | Buy Now |
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Future Electronics | Single P-Channel 30 V 88 mOhms Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks Container: Reel | 204000Reel |
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$0.1180 / $0.1280 | Buy Now |
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Future Electronics | Single P-Channel 30 V 88 mOhms Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks Container: Cut Tape/Mini-Reel | 3000Cut Tape/Mini-Reel |
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$0.1970 / $0.4050 | Buy Now |
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Future Electronics | Single P-Channel 30 V 88 mOhms Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1180 / $0.1280 | Buy Now |
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SI2307CDS-T1-GE3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SI2307CDS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3.5 A | |
Drain-source On Resistance-Max | 0.088 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.8 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI2307CDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2307CDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI2307CDS-T1-E3 | TRANSISTOR 3500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal | Vishay Siliconix | SI2307CDS-T1-GE3 vs SI2307CDS-T1-E3 |
SI2307CDS-T1-GE3 | TRANSISTOR 3500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal | Vishay Siliconix | SI2307CDS-T1-GE3 vs SI2307CDS-T1-GE3 |
SI2307CDS-T1-E3 | Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN | Vishay Intertechnologies | SI2307CDS-T1-GE3 vs SI2307CDS-T1-E3 |