Datasheets
SI2333DS-T1-GE3 by:

TRANSISTOR 4100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal

Part Details for SI2333DS-T1-GE3 by Vishay Siliconix

Overview of SI2333DS-T1-GE3 by Vishay Siliconix

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Price & Stock for SI2333DS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI2333DS-T1-GE3CT-ND
DigiKey MOSFET P-CH 12V 4.1A SOT23-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 6318
In Stock
  • 1 $0.8300
  • 10 $0.6820
  • 100 $0.5302
  • 500 $0.4494
  • 1,000 $0.3661
  • 3,000 $0.3447
  • 6,000 $0.3282
  • 9,000 $0.3131
  • 30,000 $0.3125
$0.3125 / $0.8300 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 6000
  • 3,000 $0.4214
  • 6,000 $0.3933
$0.3933 / $0.4214 Buy Now

Part Details for SI2333DS-T1-GE3

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SI2333DS-T1-GE3 Part Data Attributes

SI2333DS-T1-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI2333DS-T1-GE3 Vishay Siliconix TRANSISTOR 4100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 4.1 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 300 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2333DS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2333DS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2333DS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI2333DS-T1-BE3 Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN Vishay Intertechnologies SI2333DS-T1-GE3 vs SI2333DS-T1-BE3
SI2333DS-T1-GE3 Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN Vishay Intertechnologies SI2333DS-T1-GE3 vs SI2333DS-T1-GE3
Part Number Description Manufacturer Compare
SI2333DS Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN Vishay Siliconix SI2333DS-T1-GE3 vs SI2333DS
RAF040P01TCL Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT3, 3 PIN ROHM Semiconductor SI2333DS-T1-GE3 vs RAF040P01TCL
SI2333DS-T1-BE3 Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN Vishay Intertechnologies SI2333DS-T1-GE3 vs SI2333DS-T1-BE3

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