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Part Details for SI2356DS-T1-GE3 by Vishay Intertechnologies
Overview of SI2356DS-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI2356DS-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
05AC9483
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Newark | Mosfet, N-Ch, 40V, 4.3A, Sot-23, Transistor Polarity:N Channel, Continuous Drain Current Id:4.3A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.042Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.5V, Power Rohs Compliant: Yes |Vishay SI2356DS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 12000 |
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$0.1210 / $0.1220 | Buy Now |
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DISTI #
01AC4982
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Newark | Mosfet, N-Ch, 40V, 4.3A, Sot-23, Transistor Polarity:N Channel, Continuous Drain Current Id:4.3A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.042Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.5V, Power Rohs Compliant: Yes |Vishay SI2356DS-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 37750 |
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$0.1910 / $0.4220 | Buy Now |
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DISTI #
67X6849
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Newark | N-Channel 40-V (D-S) Mosfet |Vishay SI2356DS-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0860 / $0.1310 | Buy Now |
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DISTI #
SI2356DS-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2356DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 3000 |
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$0.0854 / $0.0940 | Buy Now |
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DISTI #
SI2356DS-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2356DS-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$0.0894 / $0.1105 | Buy Now |
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DISTI #
78-SI2356DS-T1-GE3
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Mouser Electronics | MOSFET 40V Vds 12V Vgs SOT-23 RoHS: Compliant | 221173 |
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$0.0880 / $0.3900 | Buy Now |
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DISTI #
E02:0323_07507476
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Arrow Electronics | Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks Date Code: 2411 | Europe - 21000 |
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$0.0956 / $0.1130 | Buy Now |
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DISTI #
V36:1790_09216727
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Arrow Electronics | Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Date Code: 2404 | Americas - 9000 |
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$0.0809 / $0.1040 | Buy Now |
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DISTI #
V72:2272_09216727
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Arrow Electronics | Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2402 Container: Cut Strips | Americas - 4486 |
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$0.1050 / $0.3822 | Buy Now |
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Future Electronics | Si2356DS Series 40 V 3.2 A 51 mOhm Surface Mount N-Channel Mosfet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 9000Reel |
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$0.0783 / $0.0880 | Buy Now |
Part Details for SI2356DS-T1-GE3
SI2356DS-T1-GE3 CAD Models
SI2356DS-T1-GE3 Part Data Attributes:
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SI2356DS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2356DS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.3A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-236, SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 0.051 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 17 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.7 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |