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Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
05AC9484
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Newark | Mosfet, P-Ch, -20V, -5.9A, Sot-23, Transistor Polarity:P Channel, Continuous Drain Current Id:-5.9A, Drain Source Voltage Vds:-20V, On Resistance Rds(On):0.0265Ohm, Rds(On) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power Rohs Compliant: Yes |Vishay SI2365EDS-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 6000 |
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$0.0790 / $0.0930 | Buy Now |
DISTI #
70AC6497
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Newark | Mosfet, P-Ch, -20V, -5.9A, Sot-23, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:5.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V, Msl:- Rohs Compliant: Yes |Vishay SI2365EDS-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3000 |
|
$0.0560 | Buy Now |
DISTI #
67X6850
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Newark | P-Channel 20-V (D-S) Mosfet |Vishay SI2365EDS-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0610 / $0.1210 | Buy Now |
DISTI #
79AH6518
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Newark | P-Channel 20-V (D-S) Mosfet Rohs Compliant: No |Vishay SI2365EDS-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
SI2365EDS-T1-GE3
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Avnet Americas | P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2365EDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 3000 |
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$0.0581 | Buy Now |
DISTI #
70AC6497
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Avnet Americas | P-CHANNEL 20-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 70AC6497) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack | 3000 Partner Stock |
|
$0.1230 / $0.3900 | Buy Now |
DISTI #
78-SI2365EDS-T1-GE3
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Mouser Electronics | MOSFETs -20V Vds 8V Vgs SOT-23 RoHS: Compliant | 126702 |
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$0.0590 / $0.3900 | Buy Now |
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Future Electronics | MOSFET P-CH 20V 5.9A TO-236 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel | 21000Reel |
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$0.0600 / $0.0677 | Buy Now |
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Future Electronics | MOSFET P-CH 20V 5.9A TO-236 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.0579 / $0.0653 | Buy Now |
DISTI #
SI2365EDS-T1-GE3
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TTI | MOSFETs -20V Vds 8V Vgs SOT-23 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.0580 / $0.0680 | Buy Now |
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SI2365EDS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2365EDS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | TO-236, SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 3 Days | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 5.9 A | |
Drain-source On Resistance-Max | 0.041 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.7 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |