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Part Details for SI2399DS-T1-GE3 by Vishay Intertechnologies
Overview of SI2399DS-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (23 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI2399DS-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26AK9917
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Newark | P-Channel 20-V (D-S) Mosfet |Vishay SI2399DS-T1-GE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3000 |
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$0.1300 | Buy Now |
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DISTI #
64T4058
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Newark | Mosfet, P Channel, -20V, -6A, Sot-23-3, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:600Mv Rohs Compliant: Yes |Vishay SI2399DS-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 625 |
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$0.1430 | Buy Now |
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DISTI #
99W9608
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Newark | Mosfet Transistor, P Channel, -6 A, -20 V, 0.028 Ohm, -10 V, -600 Mv |Vishay SI2399DS-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1460 / $0.1940 | Buy Now |
|
DISTI #
26AK9917
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Avnet Americas | Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 26AK9917) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack | 3000 Partner Stock |
|
$0.1530 / $0.5500 | Buy Now |
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DISTI #
64T4058
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Avnet Americas | Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 64T4058) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack | 625 Partner Stock |
|
$0.1690 / $0.6050 | Buy Now |
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DISTI #
SI2399DS-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2399DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.1350 | Buy Now |
|
DISTI #
78-SI2399DS-T1-GE3
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Mouser Electronics | MOSFETs -20V Vds 12V Vgs SOT-23 RoHS: Compliant | 69070 |
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$0.1350 / $0.4900 | Buy Now |
|
|
Future Electronics | 20V, 6A, 34MOHM, P-CHANNEL, SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1310 / $0.1410 | Buy Now |
|
|
Future Electronics | 20V, 6A, 34MOHM, P-CHANNEL, SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$0.1310 / $0.1410 | Buy Now |
|
DISTI #
83638542
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Verical | Trans MOSFET P-CH 20V 6A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2415 | Americas - 312000 |
|
$0.1342 | Buy Now |
Part Details for SI2399DS-T1-GE3
SI2399DS-T1-GE3 CAD Models
SI2399DS-T1-GE3 Part Data Attributes
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|
SI2399DS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2399DS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-236, SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 3 Days | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.034 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 155 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |