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Part Details for SI3421DV-T1-GE3 by Vishay Intertechnologies
Overview of SI3421DV-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI3421DV-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
29X6570
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Newark | Mosfet, P Channel, -30V, -8A, Tsop-6, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI3421DV-T1-GE3 RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1480 / $0.1930 | Buy Now |
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DISTI #
05AC9487
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Newark | Mosfet, P-Ch, -30V, -8A, Tsop, Transistor Polarity:P Channel, Continuous Drain Current Id:-8A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.016Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-3V, Power Dissipationrohs Compliant: Yes |Vishay SI3421DV-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.1850 / $0.2080 | Buy Now |
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DISTI #
29X6569
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Avnet Americas | Trans MOSFET P-CH 30V 8.3A 6-Pin TSOP T/R - Product that comes on tape, but is not reeled (Alt: 29X6569) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack | 6 Partner Stock |
|
$0.2410 | Buy Now |
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DISTI #
SI3421DV-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 30V 8.3A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3421DV-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$0.1406 | Buy Now |
|
DISTI #
78-SI3421DV-T1-GE3
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Mouser Electronics | MOSFETs -30V Vds 20V Vgs TSOP-6 RoHS: Compliant | 18261 |
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$0.1430 / $0.3800 | Buy Now |
|
|
Future Electronics | P-Channel 20 V 0.0192 Ohm 69 nC Surface Mount Power Mosfet - TSOP-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1380 / $0.1490 | Buy Now |
|
|
Future Electronics | P-Channel 20 V 0.0192 Ohm 69 nC Surface Mount Power Mosfet - TSOP-6 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel | 0Reel |
|
$0.1380 / $0.1490 | Buy Now |
|
DISTI #
SI3421DV-T1-GE3
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TTI | MOSFETs -30V Vds 20V Vgs TSOP-6 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 30000 In Stock |
|
$0.1410 / $0.1490 | Buy Now |
|
DISTI #
SI3421DV-T1-GE3
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TME | Transistor: P-MOSFET, TrenchFET®, unipolar, -30V, -8A, Idm: -50A Min Qty: 1 | 719 |
|
$0.2090 / $0.4980 | Buy Now |
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DISTI #
SI3421DV-T1-GE3
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Avnet Asia | Trans MOSFET P-CH 30V 8.3A 6-Pin TSOP T/R (Alt: SI3421DV-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days | 0 |
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RFQ |
Part Details for SI3421DV-T1-GE3
SI3421DV-T1-GE3 CAD Models
SI3421DV-T1-GE3 Part Data Attributes
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|
SI3421DV-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI3421DV-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 3 Days | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.0192 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-193AA | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |