Datasheets
SI3456DV-T1 by:

Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for SI3456DV-T1 by Temic Semiconductors

Overview of SI3456DV-T1 by Temic Semiconductors

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Financial Technology (Fintech) Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for SI3456DV-T1

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SI3456DV-T1 Part Data Attributes:

SI3456DV-T1 Temic Semiconductors
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SI3456DV-T1 Temic Semiconductors Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Part Life Cycle Code Transferred
Ihs Manufacturer TEMIC SEMICONDUCTORS
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.1 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

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