Parametric results for: SI3456DV-T1 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

5 hits Apply

Drain Current-Max (ID) (1)

5.1 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

45 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-G 1 R-PDSO-G6 3

5 hits Apply

e0 2 e3 2

5 hits Apply

Manufacturer (3)

Temic Semiconductors 1 Vishay Intertechnologies 2 Vishay Siliconix 2

5 hits Apply

1 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

6 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 1

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Obsolete 4 Transferred 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

2 W 1

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply