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Part Details for SI3458BDV-T1-GE3 by Vishay Intertechnologies
Overview of SI3458BDV-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI3458BDV-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
15R4946
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Newark | N Ch Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:3.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Power Dissipation:2W Rohs Compliant: Yes |Vishay SI3458BDV-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3040 / $0.4050 | Buy Now |
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DISTI #
84R8039
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Newark | N Channel Mosfet, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:3.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Power Dissipation:2W Rohs Compliant: Yes |Vishay SI3458BDV-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.4320 | Buy Now |
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DISTI #
SI3458BDV-T1-GE3
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Avnet Americas | N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI3458BDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.2862 | Buy Now |
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DISTI #
80326337
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Verical | Trans MOSFET N-CH 60V 4.1A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2407 | Americas - 18000 |
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$0.2892 / $0.3402 | Buy Now |
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DISTI #
83631721
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Verical | Trans MOSFET N-CH 60V 4.1A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2423 | Americas - 3000 |
|
$0.2806 / $0.3051 | Buy Now |
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DISTI #
80576142
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Verical | Trans MOSFET N-CH 60V 4.1A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2413 | Americas - 3000 |
|
$0.2887 / $0.3033 | Buy Now |
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DISTI #
66461453
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Verical | Trans MOSFET N-CH 60V 4.1A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 20 Package Multiple: 1 Date Code: 2250 | Americas - 2937 |
|
$0.3082 / $0.6517 | Buy Now |
|
DISTI #
SI3458BDV-T1-GE3
|
TTI | MOSFETs 60V 4.1A 3.3W 100mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.2760 / $0.2990 | Buy Now |
|
DISTI #
SI3458BDV-T1-GE3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 60V, 3.2A, Idm: 10A Min Qty: 1 | 1809 |
|
$0.3500 / $0.8000 | Buy Now |
|
DISTI #
C1S803600844593
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Chip1Stop | Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R RoHS: Compliant | 3000 |
|
$0.3280 | Buy Now |
Part Details for SI3458BDV-T1-GE3
SI3458BDV-T1-GE3 CAD Models
SI3458BDV-T1-GE3 Part Data Attributes
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SI3458BDV-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI3458BDV-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 3.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 4.1 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 20 pF | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.3 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 35 ns | |
| Turn-on Time-Max (ton) | 55 ns |
Alternate Parts for SI3458BDV-T1-GE3
This table gives cross-reference parts and alternative options found for SI3458BDV-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3458BDV-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RQ5L030SNTL | Small Signal Field-Effect Transistor, | ROHM Semiconductor | SI3458BDV-T1-GE3 vs RQ5L030SNTL |