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Trans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI4126DY-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 39A 8SO Min Qty: 1 Lead time: 19 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4263 In Stock |
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$1.0342 / $2.3800 | Buy Now |
|
ES Components | 0 | 0 in Stock |
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RFQ | |
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New Advantage Corporation | Single N-Channel 30 V 0.00275 Ohm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 2500 |
|
$1.2900 | Buy Now |
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SI4126DY-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI4126DY-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 26.5 A | |
Drain-source On Resistance-Max | 0.0028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 7.8 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI4126DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4126DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI4126DY-T1-GE3 | Small Signal Field-Effect Transistor, 26.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Vishay Intertechnologies | SI4126DY-T1-GE3 vs SI4126DY-T1-GE3 |
SI4842BDY-T1-GE3 | Small Signal Field-Effect Transistor, 20A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | SI4126DY-T1-GE3 vs SI4842BDY-T1-GE3 |
SI4842BDY-T1-E3 | Small Signal Field-Effect Transistor, 28A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | SI4126DY-T1-GE3 vs SI4842BDY-T1-E3 |