Datasheets
SI4401BDY-T1-GE3 by:

Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, MS-012, SOP-8

Part Details for SI4401BDY-T1-GE3 by Vishay Intertechnologies

Overview of SI4401BDY-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI4401BDY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 69W7197
Newark Mosfet, P Channel, -40V, -8.7A, Soic-8, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:8.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI4401BDY-T1-GE3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 250 $1.1500
$1.1500 Buy Now
DISTI # 16P3734
Newark P Channel Mosfet, -40V, 10.5A, Soic, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:10.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Power Dissipation:1.5W Rohs Compliant: Yes |Vishay SI4401BDY-T1-GE3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,500 $0.8620
  • 5,000 $0.8500
  • 10,000 $0.8490
$0.8490 / $0.8620 Buy Now
DISTI # 51AK9382
Newark Mosfet, P Ch, -40V, -8.7A, Soic |Vishay SI4401BDY-T1-GE3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1,000 $0.9700
$0.9700 Buy Now
DISTI # SI4401BDY-T1-GE3
Avnet Americas Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4401BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.7733
$0.7733 Buy Now
Future Electronics P-CHANNEL 40-V (D-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.7850
  • 5,000 $0.7600
$0.7600 / $0.7850 Buy Now
Bristol Electronics   10
RFQ
DISTI # SI4401BDY-T1-GE3
TTI MOSFETs 40V 10.5A 2.9W 14mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 10000
In Stock
  • 2,500 $0.8300
  • 5,000 $0.8000
  • 12,500 $0.7800
$0.7800 / $0.8300 Buy Now
DISTI # SI4401BDY-T1-GE3
TME Transistor: P-MOSFET, unipolar, -40V, -8.7A, Idm: -50A, 0.95W, SO8 Min Qty: 1 0
  • 1 $1.9000
  • 10 $1.5500
  • 25 $1.4000
  • 100 $1.2700
  • 250 $1.2300
  • 500 $1.1100
  • 1,000 $0.9900
  • 2,500 $0.9600
$0.9600 / $1.9000 RFQ
DISTI # C1S803601787727
Chip1Stop Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R RoHS: Compliant pbFree: Yes 2500
  • 2,500 $0.7560
$0.7560 Buy Now
DISTI # C1S803604222841
Chip1Stop Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 498
  • 1 $1.7200
  • 10 $1.4300
  • 50 $1.3200
  • 100 $1.1100
  • 200 $1.0500
$1.0500 / $1.7200 Buy Now
DISTI # SI4401BDY-T1-GE3
EBV Elektronik Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R (Alt: SI4401BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 40V 8.7A 1.5W 14m10V10.5A 3V250uA 1 Piece P-Channel SOIC-8 MOSFETs ROHS 1292
  • 1 $1.3302
  • 10 $1.1119
  • 30 $0.9926
  • 100 $0.8575
  • 500 $0.7979
  • 1,000 $0.7696
$0.7696 / $1.3302 Buy Now
New Advantage Corporation LF SMD MOSFET PCH SI4401BDYT1GE3 SOIC8 RoHS: Compliant Min Qty: 1 Package Multiple: 10 849
  • 100 $0.8200
  • 500 $0.7100
$0.7100 / $0.8200 Buy Now

Part Details for SI4401BDY-T1-GE3

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SI4401BDY-T1-GE3 Part Data Attributes

SI4401BDY-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4401BDY-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, MS-012, SOP-8
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN AND LEAD FREE, MS-012, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 8.7 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.9 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SI4401BDY-T1-GE3

This table gives cross-reference parts and alternative options found for SI4401BDY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4401BDY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4401BDY-T1-E3 Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4401BDY-T1-GE3 vs SI4401BDY-T1-E3
SI4401BDY-T1-E3 Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, MS-012, SOP-8 Vishay Intertechnologies SI4401BDY-T1-GE3 vs SI4401BDY-T1-E3
SI4401BDY-T1-GE3 Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4401BDY-T1-GE3 vs SI4401BDY-T1-GE3
Part Number Description Manufacturer Compare
SI4401BDY-T1-GE3 Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4401BDY-T1-GE3 vs SI4401BDY-T1-GE3
SI4401BDY-T1-E3 Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, MS-012, SOP-8 Vishay Intertechnologies SI4401BDY-T1-GE3 vs SI4401BDY-T1-E3
SI4401BDY-T1-E3 Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4401BDY-T1-GE3 vs SI4401BDY-T1-E3

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