Datasheets
SI4435BDY-T1 by:

Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Part Details for SI4435BDY-T1 by Vishay Siliconix

Overview of SI4435BDY-T1 by Vishay Siliconix

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Part Details for SI4435BDY-T1

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SI4435BDY-T1 Part Data Attributes

SI4435BDY-T1 Vishay Siliconix
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SI4435BDY-T1 Vishay Siliconix Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4435BDY-T1

This table gives cross-reference parts and alternative options found for SI4435BDY-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4435BDY-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4435BDY-T1-E3 Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4435BDY-T1 vs SI4435BDY-T1-E3
Part Number Description Manufacturer Compare
SI4835DYD84Z Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4435BDY-T1 vs SI4835DYD84Z
SI4435DDY-T1-E3 Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4435BDY-T1 vs SI4435DDY-T1-E3
SI4435BDY-E3 Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4435BDY-T1 vs SI4435BDY-E3
SI4435DY-T1 Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Vishay Intertechnologies SI4435BDY-T1 vs SI4435DY-T1
SI4435DY-T1 TRANSISTOR 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal Vishay Siliconix SI4435BDY-T1 vs SI4435DY-T1
SI4435DY-T1-A-E3 Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 Vishay Siliconix SI4435BDY-T1 vs SI4435DY-T1-A-E3
SI4835DYF011 Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4435BDY-T1 vs SI4835DYF011
SI9803DY-T1 Small Signal Field-Effect Transistor, 5.9A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4435BDY-T1 vs SI9803DY-T1
SI4835DYL86Z Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4435BDY-T1 vs SI4835DYL86Z
SI4835DY-T1 Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4435BDY-T1 vs SI4835DY-T1

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