Datasheets
SI4435DDY-T1-E3 by:

Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

Part Details for SI4435DDY-T1-E3 by Vishay Intertechnologies

Overview of SI4435DDY-T1-E3 by Vishay Intertechnologies

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Price & Stock for SI4435DDY-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 61AC1934
Newark Mosfet, P Ch, 30V, 11.4A, 8Soic, Transistor Polarity:P Channel, Continuous Drain Current Id:-11.4A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.0195Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-3V, Power Rohs Compliant: Yes |Vishay SI4435DDY-T1-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 4421
  • 1 $0.6700
  • 10 $0.5850
  • 25 $0.5270
  • 50 $0.4690
  • 100 $0.4110
$0.4110 / $0.6700 Buy Now
DISTI # 16P3739
Newark P Channel Mosfet, -30V, 11.4A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:11.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI4435DDY-T1-E3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 100 $0.5150
$0.5150 Buy Now
DISTI # 29X0534
Newark Mosfet, P Channel, -30V, -11.4A, Soic-8, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:11.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:5W Rohs Compliant: Yes |Vishay SI4435DDY-T1-E3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.3350
  • 5,000 $0.3270
  • 10,000 $0.3030
  • 20,000 $0.2820
  • 30,000 $0.2630
  • 50,000 $0.2510
$0.2510 / $0.3350 Buy Now
DISTI # SI4435DDY-T1-E3
Avnet Americas P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4435DDY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.2318
$0.2318 Buy Now
DISTI # 781-SI4435DDY-T1-E3
Mouser Electronics MOSFETs -30V Vds 20V Vgs SO-8 RoHS: Compliant 3256
  • 1 $0.6500
  • 10 $0.5640
  • 100 $0.4040
  • 500 $0.3480
  • 1,000 $0.2980
  • 2,500 $0.2680
  • 5,000 $0.2510
  • 10,000 $0.2400
  • 25,000 $0.2370
$0.2370 / $0.6500 Buy Now
Future Electronics Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 2500
Reel
  • 2,500 $0.2400
  • 5,000 $0.2350
  • 7,500 $0.2350
  • 10,000 $0.2300
  • 12,500 $0.2250
$0.2250 / $0.2400 Buy Now
Future Electronics Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Container: Reel 0
Reel
  • 2,500 $0.2400
  • 5,000 $0.2350
  • 7,500 $0.2350
  • 10,000 $0.2300
  • 12,500 $0.2250
$0.2250 / $0.2400 Buy Now
DISTI # 83682703
Verical Trans MOSFET P-CH 30V 11.4A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Date Code: 2431 Americas - 10000
  • 2,500 $0.2670
  • 5,000 $0.2503
  • 10,000 $0.2393
  • 25,000 $0.2304
$0.2304 / $0.2670 Buy Now
DISTI # 82701227
Verical Trans MOSFET P-CH 30V 11.4A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Date Code: 2425 Americas - 2500
  • 2,500 $0.2570
  • 5,000 $0.2429
  • 10,000 $0.2335
  • 25,000 $0.2117
$0.2117 / $0.2570 Buy Now
DISTI # 69142429
Verical Trans MOSFET P-CH 30V 11.4A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 24 Package Multiple: 1 Date Code: 2322 Americas - 2019
  • 25 $0.3381
  • 100 $0.2979
  • 250 $0.2950
  • 500 $0.2849
  • 1,000 $0.2697
$0.2697 / $0.3381 Buy Now
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.1A I(D), 30V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 16
  • 1 $0.8815
  • 7 $0.7052
$0.7052 / $0.8815 Buy Now
DISTI # SI4435DDY-T1-E3
TTI MOSFETs -30V Vds 20V Vgs SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 0
  • 2,500 $0.2580
  • 5,000 $0.2480
  • 10,000 $0.2420
  • 25,000 $0.2380
$0.2380 / $0.2580 Buy Now
DISTI # SI4435DDY
TME Transistor: P-MOSFET, unipolar, -30V, -6.5A, 5W, SO8 Min Qty: 3 1201
  • 3 $0.4490
  • 10 $0.4280
  • 50 $0.3870
  • 250 $0.3470
  • 1,000 $0.3170
$0.3170 / $0.4490 Buy Now
DISTI # SI4435DDY-T1-E3
Avnet Asia P-CHANNEL 30-V (D-S) MOSFET (Alt: SI4435DDY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days 0
RFQ
DISTI # C1S803600845033
Chip1Stop MOSFET RoHS: Compliant 10000
  • 2,500 $0.2670
  • 5,000 $0.2503
  • 10,000 $0.2390
$0.2390 / $0.2670 Buy Now
DISTI # C1S803601769952
Chip1Stop MOSFET RoHS: Compliant 2019
  • 10 $0.3560
  • 25 $0.3381
  • 100 $0.2979
  • 250 $0.2950
  • 500 $0.2849
  • 1,000 $0.2810
$0.2810 / $0.3560 Buy Now
DISTI # SI4435DDY-T1-E3
EBV Elektronik Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R (Alt: SI4435DDY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 11.4A 24m10V9.1A 3V250uA 1 Piece P-Channel SOIC-8 MOSFETs ROHS 1773
  • 1 $0.4626
  • 10 $0.4073
  • 30 $0.3789
  • 100 $0.3521
  • 500 $0.3347
  • 1,000 $0.3268
$0.3268 / $0.4626 Buy Now

Part Details for SI4435DDY-T1-E3

SI4435DDY-T1-E3 CAD Models

SI4435DDY-T1-E3 Part Data Attributes

SI4435DDY-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4435DDY-T1-E3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8.1 A
Drain-source On Resistance-Max 0.024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 5 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4435DDY-T1-E3

This table gives cross-reference parts and alternative options found for SI4435DDY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4435DDY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4435DDY-T1-GE3 Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4435DDY-T1-E3 vs SI4435DDY-T1-GE3
Part Number Description Manufacturer Compare
SI4835DYD84Z Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4435DDY-T1-E3 vs SI4835DYD84Z
SI4435DDY-T1-E3 Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4435DDY-T1-E3 vs SI4435DDY-T1-E3
SI4435BDY-E3 Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4435DDY-T1-E3 vs SI4435BDY-E3
SI4435DY-T1 Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Vishay Intertechnologies SI4435DDY-T1-E3 vs SI4435DY-T1
SI4435DY-T1 TRANSISTOR 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal Vishay Siliconix SI4435DDY-T1-E3 vs SI4435DY-T1
SI4435DY-T1-A-E3 Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 Vishay Siliconix SI4435DDY-T1-E3 vs SI4435DY-T1-A-E3
SI4835DYF011 Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4435DDY-T1-E3 vs SI4835DYF011
SI9803DY-T1 Small Signal Field-Effect Transistor, 5.9A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4435DDY-T1-E3 vs SI9803DY-T1
SI4835DYL86Z Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4435DDY-T1-E3 vs SI4835DYL86Z
SI4835DY-T1 Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4435DDY-T1-E3 vs SI4835DY-T1

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