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Transistors Small Signal Field-Effect Transistors SI4532ADY-T1-E3

SI4532ADY-T1-E3
Description: Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8

Overview of SI4532ADY-T1-E3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Available Datasheets

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Price & Stock for SI4532ADY-T1-E3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   842
RFQ
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.7A I(D), 30V, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA 673
  • 1 $2.0925
  • 49 $1.0463
  • 192 $0.8370
$0.8370 / $2.0925 Buy Now

CAD Models for SI4532ADY-T1-E3 by Vishay Intertechnologies
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Part Data Attributes for SI4532ADY-T1-E3 by Vishay Intertechnologies
Parametric Data

SI4532ADY-T1-E3
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
MS-012, SOIC-8
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Samacsys Manufacturer
Vishay
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
3.7 A
Drain-source On Resistance-Max
0.053 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs)
2 W
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Element Material
SILICON
Want to compare parts?
  1. SI4532ADY-T1-E3
    Vishay Intertechnologies
    Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8
    VS

Alternate Parts for SI4532ADY-T1-E3

This table gives cross-reference parts and alternative options found for SI4532ADY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4532ADY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SI4532ADY-T1 Transistor, Vishay Intertechnologies SI4532ADY-T1-E3 vs SI4532ADY-T1
SI4532ADY-T1 Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4532ADY-T1-E3 vs SI4532ADY-T1
Part Number Description Manufacturer Compare
NDS8928/S62Z 5500mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET Texas Instruments SI4532ADY-T1-E3 vs NDS8928/S62Z
NDS8858H Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4532ADY-T1-E3 vs NDS8858H
SI4532CDY-T1-GE3 Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 Vishay Intertechnologies SI4532ADY-T1-E3 vs SI4532CDY-T1-GE3
SI4511DY-T1-GE3 Small Signal Field-Effect Transistor, 7.2A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI4532ADY-T1-E3 vs SI4511DY-T1-GE3
SI4532ADY-T1 Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4532ADY-T1-E3 vs SI4532ADY-T1
NDS8852H Small Signal Field-Effect Transistor, 4.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI4532ADY-T1-E3 vs NDS8852H
NDS8839HD84Z Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4532ADY-T1-E3 vs NDS8839HD84Z
NDH8321C 3800mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-8 Rochester Electronics LLC SI4532ADY-T1-E3 vs NDH8321C
NDH8520C Small Signal Field-Effect Transistor, 2.8A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation SI4532ADY-T1-E3 vs NDH8520C
NDS8928/L99Z 5500mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET Texas Instruments SI4532ADY-T1-E3 vs NDS8928/L99Z

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